Broadband high-power GaN pre-matching power tube

Abstract

The invention provides a broadband high-power GaN pre-matching power tube, relates to a microwave power amplifier and belongs to the technical field of a basic electronic circuit. An input pre-matching network of the broadband high-power GaN pre-matching power tube adopts distributed element matching, and matching elements are manufactured on an aluminum oxide ceramic substrate; the output pre-matching network adopts a resonance network matching form; the position close to a drain end of a GaN HEMT tube core is connected with the ground in series through a section of inductance capacitor to form the parallel resonance network with a capacitor between a drain electrode and a source electrode of the GaN HEMT, by optimizing an inductance value of the inductor, the parallel resonance network forms parallel resonance in a fundamental frequency band, the impedance of the GaN HEMT to the ground is improved, and broadband impedance matching of the high-power GaN HEMT device is realized throughimprovement of the impedance. The power tube is advantaged in that implementation difficulty of broadband matching of the high-power GaN HEMT device is effectively reduced, so the broadband high-power GaN power tube is more and more widely utilized.

Description

technical field [0001] The invention discloses a broadband high-power GaN pre-matching power tube, relates to microwave power amplifiers, and belongs to the technical field of basic electronic circuits. Background technique [0002] In view of the further development requirements of radar and communication systems with multi-function, fast response, anti-electronic interference, high reliability and mobility, miniaturized and high-performance microwave power amplifiers have become the current research trend. Both the first-generation semiconductors represented by Ge and Si and the second-generation semiconductors represented by GaAs can no longer fully meet the system's high-frequency and high-power requirements for power amplifiers. The third-generation semiconductor materials represented by GaN have the characteristics of wide band gap, high electron mobility, high electron saturation rate, high breakdown voltage, high thermal conductivity, good chemical stability and stro...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to address the shortcomings of the above-mentioned background technology and provide a broadband high-power GaN pre-matched power tube, which not only meets the high-power demand but also realizes the simplification of the whole machine channel, and solves the problem that the existing microwave power devices cannot meet the requirements at the same time. Technical issues of high power output and miniaturization requirements of the whole machine unit

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