Back capacitor structure and manufacturing method

Abstract

The invention discloses a back capacitor structure and a manufacturing method. The method comprises the following steps of arranging a nitride layer on the front of a semiconductor substrate and arranging a hole, directly facing the nitride layer, in the back of the semiconductor substrate, wherein the nitride layer is arranged at the bottom of the hole; arranging first metal layers on the inner wall of the hole and the back of the semiconductor substrate; arranging dielectric layers on the inner wall of the hole and the back of the semiconductor substrate, wherein the dielectric layers coverthe first metal layers; arranging through holes in the dielectric layer above the first metal layers of the semiconductor substrate; and manufacturing a hole in the back of the semiconductor substrate. The capacitor structure in the manufactured hole is capable of greatly improving the capacity area, thereby improving the area utilization rate of an epitaxy structure; the occupied planar space issmaller, so that benefit is provided to reduce the device size; and the back capacitor is manufactured without changing the original manufacturing process, so that the process cost is saved.

Description

technical field [0001] The invention relates to the field of manufacturing capacitors on semiconductor devices, in particular to a back capacitor structure and a manufacturing method. Background technique [0002] The production of capacitors is formed by the first metal layer and the second metal layer and the medium between them. The structure is as follows: figure 1 shown. Generally, passive component capacitors are fabricated on the front side of semiconductor devices. In order to save the area of ​​semiconductor devices, the traditional planar capacitor structure has a lower area S and a lower capacitance value. In general, once the material of the dielectric layer is determined, the minimum spacing is determined. To increase the capacitance, the area of ​​the plate is generally increased, but this greatly occupies the chip area, which is not conducive to integration. Contents of the invention [0003] For this reason, it is necessary to provide a back capacitor str...

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Problems solved by technology

[0003] Therefore, it is necessary to provide a backside capacitor structure and manufacturing method to solve the problem that traditional planar capacitors occupy a large area of ​​semiconductor devices

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