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3D memory device and manufacturing method thereof

A storage device and manufacturing method technology, applied in the field of memory, can solve problems such as device damage, memory cell short circuit, structural distortion, etc., and achieve the effects of reducing the probability of distortion, improving yield and reliability, and reducing time.

Active Publication Date: 2020-02-18
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the increasing number of layers in the stacked structure, the high aspect ratio (High Aspect Ratio, HAR) of the stacked structure will cause the structure of the gate line gap to be twisted (twisting) when the gate line gap is formed, and it is easy to integrate with the surrounding memory cells. short circuit, or even damage the device

Method used

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  • 3D memory device and manufacturing method thereof
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  • 3D memory device and manufacturing method thereof

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Embodiment Construction

[0026] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0027] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0028] If it is to describe the situation directly on another layer or an...

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Abstract

The invention discloses a 3D memory device and a manufacturing method thereof. The 3D memory device comprises a substrate; a gate stack structure located on the substrate, wherein the gate stack structure comprises a plurality of conductor layers and a plurality of insulating layers which are alternately stacked; a plurality of channel columns which penetrate through the gate stack structure; anda plurality of false gate lines which penetrate through the gate stack structure, wherein at least one false gate line is discontinuous along a direction perpendicular to a plurality of channel columns. The 3D memory device has discontinuous false gate lines so as to improve the bottom shape of the gate line gap and improve the yield and the reliability of the 3D memory device.

Description

technical field [0001] The present invention relates to the technical field of memory, and more specifically, to a 3D memory device and a manufacturing method thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectivel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11551H01L27/11556H01L27/11578H01L27/11582H10B41/20H10B41/30H10B41/27H10B43/20H10B43/27H10B43/30
CPCH10B41/30H10B41/27H10B43/30H10B43/27
Inventor 谢柳群杨川许波殷姿
Owner YANGTZE MEMORY TECH CO LTD
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