Novel durable anode layer ion source

A technology of anode layer and ion source, applied in the direction of cooling/ventilation/heating transformation, discharge tube, electrical components, etc., can solve problems such as unbalanced plasma concentration and unreasonable gas distribution structure, achieve balanced and stable plasma concentration, and realize long-term Time work, stable quality effect

Pending Publication Date: 2020-03-06
GUANGDONG SHENGBOER PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem of unbalanced plasma concentration caused by unreasonable gas distribution structure in the prior art, the present invention provides a new and durable anode layer ion source

Method used

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  • Novel durable anode layer ion source
  • Novel durable anode layer ion source

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Embodiment Construction

[0033] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0034] The present invention is achieved through the following technical solutions:

[0035] Such as Figure 1 to Figure 10 As shown, the new and durable anode layer ion source includes a base 8, the base 8 is provided with a mounting cavity 81 recessed downwards for installing the anode 12, and the upper end of the base 8 is provided with an external cathode 1 and the inner cathode 3, and there is a gap 82 between the outer cathode 1 and the inner cathode 3 and the anode 12, the installation cavity 81 is also provided with an air equalizing seat 11, and the air equaliz...

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Abstract

The invention belongs to the technical field of ion source auxiliary coating, and particularly relates to a novel durable anode layer ion source. According to the novel durable anode layer ion source,a mounting cavity is formed in a base, and an outer cathode and an inner cathode are arranged on the upper end face of the base; gaps are reserved between the outer cathode and an anode and between the inner cathode and the anode; a gas homogenizing seat is also arranged in the mounting cavity; a plurality of air guide holes which are formed at equal intervals and are communicated with the gaps are formed in the gas homogenizing seat; the structure of the gas homogenizing seat is added, so that process gas is enabled to pass through the air guide holes in the gas homogenizing seat before entering into a working space, the air guide holes arranged at equal intervals are adopted for uniform dispersion of the process gas, so that the process gas enters the gap between the cathode and the anode more uniformly, the process gas is uniformly distributed, the plasma concentration is balanced and stable when an ion source works, and the coating quality is more stable.

Description

【Technical field】 [0001] The invention belongs to the technical field of ion source assisted coating, and in particular relates to a novel and durable ion source for an anode layer. 【Background technique】 [0002] Anodic ion source coating is widely used in precision optics, semiconductors, microelectronics, decorative films, hard films and other fields. Its main function is to improve the adhesion of substrates (glass, PET, PMMA, stainless steel, etc.), while effective Control the internal stress of the film layer, improve the microstructure and compactness. Its working principle is that the magnetic force lines and electric force lines are almost orthogonal near the anode of the ion source. The existence of this cross electromagnetic field traps electrons, and these electrons rotate around the magnetic force lines and drift angularly in the area near the anode to form a Hall current. Thereby, the probability of collision between electrons and neutral gas molecules or atom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H05K7/20
CPCH01J37/32055H01J37/3244H01J37/32559H05K7/20927
Inventor 姜翠宁徐从高
Owner GUANGDONG SHENGBOER PHOTOELECTRIC TECH CO LTD
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