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Method for assisting and operating memory cell and memory circuit

A memory unit and memory circuit technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of SRAM unit state change, data loss, etc.

Active Publication Date: 2020-03-13
M31 TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the external noise is greater than the static noise margin, the state of the SRAM cell will change and the stored data will be lost

Method used

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  • Method for assisting and operating memory cell and memory circuit
  • Method for assisting and operating memory cell and memory circuit
  • Method for assisting and operating memory cell and memory circuit

Examples

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Embodiment Construction

[0016] The content of the application below provides various implementations or examples, which can be used to achieve different features of the content of the application. Specific examples of parameter values, components, and configurations described below are used to simplify the content of this application. It is conceivable that these descriptions are only examples and are not intended to limit the content of the present application. For example, the parameter values ​​described below will vary with a given technology node, such as an advanced CMOS technology node, an advanced finfield-effect transistor (FinFET) technology node, or other semiconductor technology node. As another example, parameter values ​​for a given technology node may also vary with specific applications or operating scenarios. In addition, the content of this application may reuse component symbols and / or labels in multiple embodiments. Such repetition is for the sake of brevity and clarity, and do...

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Abstract

A method for assisting a memory cell in an access operation, a memory circuit, and a method for operating a memory cell are provided. The method includes: setting a supply voltage to a first supply voltage level to determine a reference probability value of the memory cell applied by the first supply voltage level; applying an assist voltage to an access line coupled to the memory cell, and setting the supply voltage to a second supply voltage level to determine a relationship between the assist voltage and the access failure probability of the memory cell applied by the second supply voltagelevel; determining, from the relationship, a target assist voltage level of the assist voltage corresponding to the reference probability value; and providing an assist circuit configured to apply thetarget assist voltage level to the access line during the access operation, wherein the memory cell is applied by the second supply voltage level during the access operation. The method enables the memory to have good power efficiency.

Description

technical field [0001] The present disclosure relates to memory access, and more particularly, to a method of assisting a memory cell in an access operation, a memory device having an assist circuit capable of providing a target assist voltage, and a method of operating a memory cell. Background technique [0002] Static random access memory (SRAM) devices have become increasingly popular in a variety of applications, such as communications, image processing, and other system-on-chip (SOC) applications that require high-speed operation and low power consumption. Although lowering the supply voltage reduces dynamic power consumption, it causes the SRAM cell to become unstable. For example, low supply voltage reduces static noise margin (SNM), which is the most commonly used parameter for evaluating SRAM cell stability. When the external noise is greater than the static noise margin, the state of the SRAM cell will change and the stored data will be lost. In addition, the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/417G11C8/08
CPCG11C8/08G11C11/417G11C11/418G11C11/419G11C7/12
Inventor 周志贤石维强
Owner M31 TECH