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Chemical vapor deposition equipment

A chemical vapor deposition and equipment technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of reduced film formation repeatability, high production cost, and difficulty in large-sized substrates. The effect of reducing the consumption of consumables, reducing manufacturing costs, and reducing consumption

Pending Publication Date: 2020-03-17
上海埃延半导体有限公司
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  • Application Information

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Problems solved by technology

This method can improve the uniformity of film formation, but there are also significant disadvantages. For example, the air flotation pipeline of the disc base is made of graphite material, the production cost is relatively high, and the rotation speed is difficult to control independently, which makes the repeatability of film formation difficult. reduce
In addition, when the size of the substrate increases, the weight of the substrate and the base of the small disk increases, and it becomes more difficult to realize the air-suspended rotation of the disk, which makes it difficult to use this method for large-sized substrates

Method used

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Embodiment Construction

[0047] In order to make the purpose and technical solutions of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0048] In the present invention, the reaction chamber includes metal vacuum, low pressure, normal pressure or high pressure containers, and also includes nozzles suitable for thermal chemical vapor deposition in the aforementioned containers and containers, graphite bases, quartz or ceramic components, heating devices Wait for spare parts. In a more general se...

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Abstract

The invention provides chemical vapor deposition equipment. The equipment comprises a reaction cavity, wherein the reaction cavity comprises a plurality of bases used for bearing substrates, the multiple bases are disc-shaped, a process gas enters the reaction cavity through a pipeline, the multiple bases are arranged in parallel with one another, and the center of a circle of each base is on thesame straight line; the upper surfaces, bearing the substrates, of the bases are parallel to one another or on the same plane; the rotating axes of the bases are on the same plane, and the bases are independently rotated relative to one another, and the process gas flows along the upper surfaces of the bases and perpendicular to the line connecting direction of the centers of the circles of the bases.

Description

technical field [0001] The invention relates to the field of chemical vapor deposition, in particular to a chemical vapor deposition equipment. Background technique [0002] Chemical vapor deposition technology (Chemical Vapor Deposition, CVD for short) is a thin film growth technology widely used in the fields of semiconductors and flat panel displays. Vapor deposition techniques have relatively low growth rates. At the same time, due to the high reaction temperature, a large amount of non-metallic graphite, quartz, ceramics and other materials are usually used to make parts of the metal reaction chamber. Limited by the processing technology of such materials, the cost of components in such a reaction chamber is very high, resulting in a relatively high cost of film formation. [0003] In the prior art, one way to solve the production cost of high temperature CVD is to use a multi-piece flat plate structure. On a large disc base, a large number of substrates are placed s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/455C23C16/46
CPCC23C16/458C23C16/455C23C16/46C23C16/54C23C16/4584C23C16/45504C23C16/52
Inventor 丁欣
Owner 上海埃延半导体有限公司