Dual-band filtering power amplifier

Abstract

The invention discloses a dual-band filtering power amplifier. An input end of an input matching circuit is connected with 50 ohm impedance; an output end of the input matching circuit is connected with the input end of the grid direct-current feed network, the input matching circuit is used for matching 50-ohm impedance to conjugation of optimal source traction impedance of the power amplifier; an input end of a grid direct-current feed network is connected with the output end of the input matching circuit, and an output end of the grid direct-current feed network is connected with a grid ofthe field-effect tube, and the grid direct-current feed network is used for applying voltage to the grid of the field-effect tube; an input end of a drain direct-current feed network is connected withthe drain of the field effect transistor, and the drain direct-current feed network is used for applying voltage to the drain of the field effect transistor; the drain electrode of the field effect transistor is connected to the input end of the drain electrode direct-current feed network and the input end of the filter matching circuit, and the source electrode of the field effect transistor isgrounded, and the field effect transistor is used for amplifying an input signal; and an output end of the filter matching circuit is connected with 50 ohm impedance, and the filter matching circuit is used for providing optimal load traction impedance for the amplifier. Fusion of the output matching circuit and the filter of the power amplifier is realized, and the cost and the power consumptionof the circuit are reduced.

Description

technical field [0001] The invention relates to wireless communication technology, in particular to a dual-band filtering power amplifier. Background technique [0002] In the RF front-end, the signal is amplified by the power amplifier, then flows through the filter to filter out the clutter signal, and finally is transmitted into the space through the antenna. As an important part of the RF front-end, the traditional design method of the power amplifier and filter is to design the two separately. The output matching circuit of the power amplifier matches the best load-pull impedance to 50 ohms, and the impedance of the input and output ports of the filter is equal. Match to 50 ohms, and then connect the two through a 50 ohm microstrip line to complete the cascade connection of the power amplifier and the filter. Due to the existence of the output matching circuit of the power amplifier and the 50-ohm microstrip line in the design, the circuit area is too large and the cir...

AI Technical Summary

Problems solved by technology

Due to the existence of the output matching circuit of the power amplifier and the 50-ohm microstrip line in the design, the circuit area is too large and the circuit integration is low. At the same time, because the circuit loss is large, the power added efficiency of the amplifier will be greatly reduced. The integration and miniaturization of the filter cascade circuit have higher requirements, and finally a filter power amplifier structure is proposed

At present, the existing filter power amplifier only connects the output matching circuit of the amplifier directly to the filter, saving the 50 ohm microstrip line, but there is still a matching circuit between the amplifier and the filter, which does not completely solve the excessive loss of the traditional method. The problem of large size and low circuit integration

[0003] In addition, with the rapid development of wireless communication technology, a variety of communication standards have emerged. As an important part of the wireless communication system, the RF front-end can no longer meet the development of modern technology. Therefore, the RF front-end is developing in the direction of multi-band

The current multi-band RF front-end design uses multiple single-band RF front-ends in parallel, but there are problems such as large and complex circuits and high energy consumption.

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