Wavelength tunable exposure machine alignment system and alignment method thereof

Abstract

The invention provides a wavelength tunable exposure machine alignment system and method. The alignment system includes: a light source component, wherein the light source component comprises a firstwavelength tunable laser and a second wavelength tunable laser, and a wavelength signal controller controls the first wavelength tunable laser, wherein the first wavelength tunable laser and the second wavelength tunable laser can provide lasers with tunable wavelengths. The wavelength signal controller controls the first wavelength tunable laser and the second wavelength tunable laser to emit laser with specified wavebands. . A light source used for pattern alignment can be selected or optimized by adjusting the wavelength of the light source, so that better or more stable product overlay performance is obtained; in addition, a remediation scheme can be provided to deal with the situation of abnormal alignment patterns caused by unstable process.

Description

technical field [0001] The invention relates to a system and method for manufacturing IC devices or other micro devices, in particular to an exposure machine alignment system and method, which can be applied to semiconductor laser alignment systems and signal detection after laser alignment patterns. Background technique [0002] In the prior art, exposure machines usually use dual light sources (red light / green light) or four light sources (red light / green light / far-infrared light / near-infrared light), and the specific selection of light sources depends on the applied hardware. For four light source exposure machines, such as figure 1 and 2 As shown in , four light sources of green light (532nm) / red light (635nm) / near-infrared light (780nm) / far-infrared light (850nm) are used. Each light source is a single-wavelength light source. However, because of the use of a single wavelength, in order to make the received signal coherent in a specific area, the wavelength of the sin...

AI Technical Summary

Problems solved by technology

It can be seen that the alignment system and method of the fixed wavelength light source in the prior art have limitations on the minimum value of the mark pitch size

[0004] In summary, it can be seen that the alignment system and method of the exposure machine in the prior art have the following defects: the pitch size and depth of the alignment pattern are limited

In addition, there is no backup remedy for single-wavelength exposure alignment systems in the event of alignment pattern anomalies due to process instability such as etching or chemical mechanical polishing (CMP)

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