A kind of memory container based on MOS tube and preparation method thereof
A technology of MOS tube and memory container, applied in the field of memory container based on MOS tube and its preparation, can solve the problems of disappearance of ferroelectric modulation effect, incompatibility of microelectronic devices, narrow operating temperature range, etc., and achieves good compactness and capacitance adjustment. Convenience, lower cost effect
Active Publication Date: 2021-05-28
NANJING UNIV
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Problems solved by technology
In 2009, T.Driscoll et al. reported the use of VO in "Science" 2 The metal-insulator transition is used to realize the continuous adjustment and memory of capacitance, but it also has problems such as narrow working temperature range, low capacitance adjustable range and large resistance value change.
In 2010, M. Krems and others published an article on ion-implanted memcapacitors in Nano Letters. It uses ions to pass through nanopores after being subjected to external fields to change the capacitance of the solution, but its work requires the participation of the solution. Incompatibility issues with microelectronic devices
The ferroelectric memory capacitance system uses the ferroelectric domain to flip under the action of an external field to achieve the effect of memory capacity, but when the electric field is removed, the ferroelectric modulation effect gradually disappears
Method used
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[0038] This embodiment provides a preparation process of a memcapacity device, which is as follows:
[0039] 1. Ultrasonic cleaning the p-Si substrate with appropriate amount of acetone, ethanol, and deionized water for 10 minutes to remove organic matter and other impurities on the Si surface. Then put the substrate into HF:H 2 Soak in O=1:10 hydrofluoric acid solution for 30s to remove surface oxides, then ultrasonically clean with deionized water for 5 minutes to wash off residual hydrofluoric acid, blow dry with high-purity nitrogen and put it into the atomic layer deposition chamber In vivo deposition of thin films.
[0040] 2. Using atomic layer deposition technology to deposit Al with a thickness of 3nm on the substrate 2 o 3 as a medium layer. Trimethylaluminum (Al(CH 3 ) 3 ) as a metal source, water vapor as an oxygen source, a growth temperature of 250°C, a growth rate of 0.1nm / cycle, and a total of 30 cycles of growth.
[0041] 3. Then put the sample obtained...
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Abstract
The invention discloses a memory container based on a MOS tube and a preparation method thereof. The structure of the memcapacitor is as follows: a first oxide dielectric layer, CuO x Nanocrystalline layer, second oxide medium layer and top electrode. By doping CuO with memristive properties in the oxide dielectric layer x Nano crystals constitute a composite dielectric layer with adjustable dielectric constant, so that the device has the function of adjustable capacitance. The memcapacitor of the invention has the advantages of simple structure, environmental friendliness, convenient capacitance adjustment, large adjustable range (adjustable rate exceeding 3000%), reconfigurability and the like.
Description
technical field [0001] The invention belongs to the field of microelectronic devices, and relates to a MOS tube-based memory container and a preparation method thereof. Background technique [0002] The concept of the memristor was first proposed by Professor Cai Shaotang in 1971. It was not until 2008 that the HP laboratory successfully produced a solid memristor based on a double-layer titanium dioxide film for the first time. In 2009, Cai Shaotang and others wrote an article on IEEE to extend the concept of memory system to capacitive and inductive components, and elaborated on the characteristics of memcapacitors and memristors. Memristors, memcapacitors, and memristors are collectively referred to as memory elements. Due to its nanometer size, low power consumption, high integration density and nonlinear characteristics, memory components are widely used in storage, artificial neural networks, nonlinear science and other fields, and are considered to be the most likely...
Claims
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IPC IPC(8): H01L29/94H01L21/34C23C14/16C23C14/35C23C14/58C23C16/40C23C16/455
CPCC23C14/165C23C14/35C23C14/5806C23C14/5853C23C16/403C23C16/45525H01L29/66969H01L29/94
Inventor 商尚炀夏奕东
Owner NANJING UNIV