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Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing same

A storage device and non-volatile technology, which is applied in the field of non-volatile ternary storage devices and its manufacturing, can solve the problems of complex memory structure and negligible research, and achieve the goal of ensuring structure simplification and energy efficiency Effect

Active Publication Date: 2020-04-07
UNIST (ULSAN NAT INST OF SCI & TECH)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, conventional ternary logic memory has problems of complex structure and volatility, but there is little research on solving this problem.

Method used

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  • Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing same
  • Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing same
  • Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing same

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Embodiment Construction

[0060] The present invention can be modified in many ways, and can have various embodiments. Specific embodiments are shown in the drawings and described in detail.

[0061] The various features of the invention disclosed in the claims can be more understood by considering the drawings and detailed description. The devices, methods, manufacturing methods, and various embodiments disclosed in the specification are provided for illustration. The disclosed structural and functional features are used to enable a person of ordinary skill to implement various embodiments, and are not used to limit the scope of the invention. The disclosed terms and articles are used to help understand the various features of the disclosed invention and are not used to limit the scope of the invention.

[0062] In describing the present invention, when it is judged that the detailed description of the related known technology makes the gist of the present invention unclear, the detailed description there...

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Abstract

The invention relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. A method of manufacturing a nonvolatile ternary memory device according to an embodiment of the present invention may comprise: a step (a) of forming a lower electrode on a substrate; (b) forming a two-dimensional ferroelectric substance on the lower electrode; (c) forming a semiconductor on the two-dimensional ferroelectric substance; and (d) forming an upper electrode on the semiconductor.

Description

Technical field [0001] The present invention relates to a ternary storage device, and more specifically to a nonvolatile ternary storage device using a two-dimensional ferroelectric substance and a manufacturing method thereof. Background technique [0002] Modern computer technology is based on a binary logic system. However, if the development speed slows down, the switch to a multi-valued logic (MVL) system will attract attention. [0003] MVL can provide a higher density logic implementation in the same chip area at a low cost. With a smaller number of interconnections, more information can be transmitted with the same number, so power consumption can be reduced. [0004] However, according to Moore's Law, MVL rapidly develops a binary logic system. Compared with the binary logic system, the research attention is significantly less. However, the passivation / end of Moore's Law increases the focus of MVL research. MVL, especially ternary logic, has considerable advantages compa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H10N97/00
CPCH10N70/8828H10N70/021G11C11/2273G11C11/2275G11C11/2259G11C11/5657H01L29/516H01L29/6684H01L29/78391H10N70/20H10N70/826H10B51/30H01L29/40111H01L29/66825H01L29/788H10B51/00G11C15/046H01L28/60H10B53/30
Inventor 李浚熙李浩植
Owner UNIST (ULSAN NAT INST OF SCI & TECH)