Control method, device and equipment of dopant for mono-crystalline silicon growth and storage medium

Abstract

The invention provides a control method, device and equipment for a dopant for mono-crystalline silicon growth and a storage medium. The method comprises the steps: obtaining a current technological parameter after the preparation of current mono-crystalline silicon is completed, inputting the current technological parameter into a preset model, determining a target volatilization proportion of the dopant; obtaining a theoretical residual amount of the dopant after the preparation of the current mono-crystalline silicon is completed; determining the actual residual amount of the dopant according to the theoretical residual amount and the target volatilization proportion; obtaining the theoretical demand of the dopant for the next single crystal silicon growth, and controlling the actual demand of the dopant for the next single crystal silicon growth according to the actual residual amount of the dopant and the theoretical demand of the dopant for the next single crystal silicon growth.According to the embodiment of the invention, by adopting the preset model, the volatilization proportion of the dopant in the process from the completion of pulling of the current mono-crystalline silicon to the next filling can be accurately obtained, so that the amount of the dopant in the next filling can be better controlled, and the resistivity of the grown next mono-crystalline silicon meets the preset requirement.

Description

technical field [0001] The invention relates to the field of crystal manufacturing technology, in particular to a method, device, equipment and storage medium for controlling dopants for growing single crystal silicon. Background technique [0002] In the process of producing single crystal silicon rods by the Czochralski method, the initial raw materials are added to the crucible to grow the first single crystal silicon rod. The second single crystal silicon rod is cycled multiple times to complete the generation of multiple single crystal silicon rods. [0003] Among them, the raw materials for preparing single crystal silicon rods include: silicon raw materials and dopants, and the concentration of dopants in the raw materials will affect the resistivity of single crystal silicon rods; in order to ensure that the resistivity of each grown single crystal silicon rods is the same , usually after adding the initial raw materials into the crucible, according to the resistivi...

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a dopant control method, equipment and storage medium for single crystal silicon growth, so as to solve the existing problem that the grown resistivity does not meet the requirements during the growth process of single crystal silicon

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