Microwave signal vertical interconnection structure
A vertical interconnection, microwave signal technology, applied in connection devices, waveguide devices, electrical components, etc., can solve the problem of difficult to realize microstrip line to SIW transfer interconnection scheme, large radiation loss of microstrip line, SIW conductor loss It can achieve the effect of easy integrated production, large microwave energy, and small insertion loss
Active Publication Date: 2020-04-14
航天科工微系统技术有限公司
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Problems solved by technology
Usually, there are direct transition, gradient line transition, concave transition, and convex transition to realize the transfer of microwave signals from microstrip line to SIW. These transition methods are all single-layer transitions, that is, the dielectric thickness of microstrip line and SIW Similarly, the problem is that the insertion loss is large, the dielectric thickness is small, the conductor loss of SIW is large, the dielectric thickness is large, and the radiation loss of the microstrip line is large. It is difficult to realize an optimal microstrip line to SIW transfer interconnection scheme.
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Embodiment 1
[0032] This embodiment provides a microwave signal vertical interconnection structure, such as Figure 1a , 1b As shown, the vertical interconnection structure includes a multi-layer board, and the multi-layer board includes 8 layers of metal boards stacked from top to bottom, respectively L1, L2, L3, L4, L5, L6, L7, L8; each adjacent two There is an insulating plate between the metal plates ( figure 2 Shown is the stacking diagram of the multilayer board); L1 is provided with a plurality of V18 ground shielding holes 6 passing through L1 to L8, and a plurality of V18 ground shielding holes surround a rectangular cavity 11, and the multilayer board is left-right symmetrical The rectangular structure is divided into a left area and a right area; the structure of the left area is as follows: the upper surface of L1 is etched to form the first microstrip line 1 perpendicular to the short side of the upper surface of the rectangular cavity 11, the first microstrip The line 1 inc...
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The invention discloses a microwave signal vertical interconnection structure, belongs to the technical field of complex radio frequency microsystems, and solves problems that an existing microstrip line and SIW have the same dielectric thickness, an insertion loss is large and a radiation loss is large too. The microwave signal vertical interconnection structure comprises a multilayer board, wherein the multilayer board includes eight layers of metal plates which are stacked from top to bottom. L1 is provided with V18 grounding shielding holes, the V18 grounding shielding holes form a rectangular cavity, and the multilayer board is a bilaterally symmetrical rectangular structure. The structure of a left side area is characterized in that the L1 is provided with a first microstrip line, and a first L1 bonding pad is formed on the L1 in the rectangular cavity; peripheries of the first microstrip line and the first L1 bonding pad are etched to form an insulated first area; L4 in the rectangular cavity is etched to form a first L4 bonding pad, and L5 is etched to form a first L5 bonding pad; and a V14 signal hole is arranged in the first L1 bonding pad, a V58 grounding hole is arranged in the first L5 bonding pad, and V12 grounding holes are arranged in two sides of the first microstrip line. The structure can be used for realizing vertical interconnection of microwave signals.
Description
technical field [0001] The invention relates to the technical field of complex radio frequency microsystems, in particular to a microwave signal vertical interconnection structure. Background technique [0002] For complex RF microsystems, it often covers both active and passive systems, and involves microwave signal transfer between various planar circuits and non-planar circuits. The typical transfer is from microstrip lines to rectangular waveguides. Its structure Large size usually requires precise machining and assembly, which is not conducive to miniaturized integrated production. The proposal of Dielectric Integrated Waveguide (SIW) technology provides a solution for converting planar circuits to non-planar circuits. Usually, there are direct transition, gradient line transition, concave transition, and convex transition to realize the transfer of microwave signals from microstrip line to SIW. These transition methods are all single-layer transitions, that is, the di...
Claims
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IPC IPC(8): H01P5/08
CPCH01P5/087
Inventor 狄隽许兰锋王升旭王强济岳超王志明夏若飞
Owner 航天科工微系统技术有限公司