Chamber sealing assembly and growth furnace

Abstract

The invention provides a chamber sealing assembly and a growth furnace. The chamber sealing assembly is arranged between a hearth flange and a reaction cavity in a surrounding manner, and comprises sealing rings and a sealing spacer ring; sealing rings are arranged on the two axial sides of the sealing spacer ring, and the sealing spacer ring is used for separating and supporting the sealing rings. Moreover, a first air exhaust channel is formed in the sealing spacer ring, the first end and the second end of the first air exhaust channel are located on the inner circumferential wall and the outer circumferential wall of the sealing spacer ring respectively; a second air exhaust channel is arranged in the hearth flange, the first end of the second air exhaust channel is connected with the second end of the first air exhaust channel; and the second end of the second air exhaust channel is used for connecting an air exhaust device. According to the chamber sealing assembly provided by theinvention, air can be prevented from leaking into the reaction chamber, meanwhile, the dismounting and maintaining efficiency of the chamber can be improved, and the risk of damaging the reaction chamber is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chamber sealing assembly and a growth furnace. Background technique [0002] Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, high carrier mobility, and high chemical stability, and can be made into high-frequency, High-power electronic devices and optoelectronic devices have great application value in the fields of national defense, high technology, industrial production, power supply, and transformation, and are regarded as the third-generation wide-bandgap semiconductor materials with great development prospects. [0003] The growth of silicon carbide single crystal materials requires special process equipment. The process equipment mainly includes growth furnace components, heating components, gas components and control components, among which the growth furnace compone...

AI Technical Summary

Problems solved by technology

However, during installation, air will be sealed between the two sealing rings. After the reaction chamber 1 is vacuumed, the vacuum inside the chamber is relatively high. There is a large difference in the indoor pressure. It is inevitable that a very small amount of air sealed in the space between the two sealing rings will leak into the chamber, which will lead to an increase in the pressure rise rate of the chamber and affect the development of the crystal growth process.

At the same time, since the pressure of the interval between the two sealing rings is lower than the external atmospheric pressure, the interval is in a negative pressure state during chamber dismantling maintenance, which makes it difficult to remove the furnace flange, and there is a risk of damaging the reaction chamber

Images