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Novel polycrystalline silicon production preheating method and novel polycrystalline silicon production preheating device

A new technology of polysilicon, applied in furnace control devices, chemical instruments and methods, silicon compounds, etc., can solve the problems of reduced microwave heating efficiency, high production costs, and large safety hazards, and achieve shortened heating time, easy operation, and improved The effect of capacity

Pending Publication Date: 2020-04-28
SICHUAN HOT PULSE MICROWAVE SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of cumbersome operation, great potential safety hazard, high energy consumption, high production cost, and rapid decrease in microwave heating efficiency existing in the prior art, the present invention discloses a novel polysilicon production preheating method and its device. The present invention can Realize rapid heating of the silicon core, and also have the advantages of low energy consumption, simple operation, safety, etc.

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  • Novel polycrystalline silicon production preheating method and novel polycrystalline silicon production preheating device
  • Novel polycrystalline silicon production preheating method and novel polycrystalline silicon production preheating device
  • Novel polycrystalline silicon production preheating method and novel polycrystalline silicon production preheating device

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Embodiment 1

[0036] This embodiment, as a basic embodiment of the present invention, discloses a reduction furnace for preheating a new type of polysilicon production, and its specific structure is as follows: figure 1 Said, including chassis 1 and furnace cover 2, described chassis 1 is connected with furnace cover 2 to form an airtight space, described chassis 1 is provided with electrode 3, and one end of electrode 3 extends into furnace cover 2 through chassis 1 In the airtight space formed with the chassis 1, the other end of the electrode 3 protrudes out of the airtight space formed by the chassis 1 and the furnace cover 2, and this section of the electrode 3 is connected to the electric heating power supply 6; the furnace cover 2 is also provided with The microwave feed port 5 is connected to the microwave generator 4, and the chassis 1 is respectively provided with an air inlet and an exhaust port for passing in and discharging the protective gas.

Embodiment 2

[0038] This embodiment is another preferred embodiment of the present invention, which discloses a new polysilicon production preheating reduction furnace, the specific structure is as follows figure 2 As shown, it includes a chassis 1 and a furnace cover 2 connected to each other, and the furnace cover 2 is connected with the chassis 1 to form a closed space. The chassis 1 is provided with an electrode 3, and one end of the electrode 3 extends through the chassis 1 into the In the closed space formed by the furnace cover 2 and the chassis 1, the other end of the electrode 3 extends out of the closed space formed by the chassis 1 and the furnace cover 2, and this section of the electrode 3 is connected to the electric heating power supply 6, and the electric heating power supply 6 A voltage detection device 7 for detecting the voltage at both ends of the silicon core 13 and a current detection device 8 for detecting the current at both ends of the silicon core 13 are arranged ...

Embodiment 3

[0040] This embodiment, as a preferred embodiment of the present invention, discloses a novel polysilicon production preheating method, comprising the following steps:

[0041] A. Make a single silicon core into a U shape or connect multiple silicon cores in series to form a U shape, then connect the two ends of the U-shaped silicon core to the two electrodes on the chassis, and then connect the chassis to the furnace cover in a sealed manner;

[0042] B. Open the air inlet and exhaust port, and pass nitrogen through the air inlet, completely replace the air in the furnace cover, and then close the air inlet and exhaust port;

[0043] C, start microwave generator, carry out microwave irradiation to silicon core, microwave power is 20kW;

[0044] D. After 60 minutes of microwave irradiation, start the electric heating power supply, energize the two electrodes on the chassis, and the energizing voltage is 3kV, read the energizing voltage and current through the voltage detection...

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Abstract

The invention discloses a novel polycrystalline silicon production preheating device, which comprises a chassis and a furnace cover which are connected with each other, wherein an electrode is arranged on the chassis, and is connected with an electric heating power supply, and the furnace cover is also connected with a microwave generator. According to the invention, a silicon core is heated by combining microwave irradiation heating and electric heating, and is mainly non-metallic in a normal temperature state, the microwave heating efficiency is high at this time, and the electric heating efficiency is continuously improved along with the reduction of the resistivity of the silicon core, the enhancement of the metallicity and the reduction of the heating efficiency of microwave irradiation, so that the advantages of microwave heating and electric heating are both achieved, the defects of high energy consumption, low heating efficiency, complicated operation and the like in the priorart are overcome, the production efficiency of polycrystalline silicon can be effectively improved, and good economic benefits are achieved.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a novel polysilicon production preheating method and device thereof. Background technique [0002] The improved Siemens method is currently the mainstream polysilicon production process, and its output accounts for about 80% of the world's total production capacity; this process uses 8-15mm thin silicon rods as silicon cores, and after heating the silicon cores to a temperature suitable for crystal growth, When the trichlorosilane gas is introduced into contact with the high-temperature silicon core, it decomposes, and the generated silicon is deposited on the silicon core to continuously grow new silicon crystals, which gradually become thicker, form the required silicon rods, and finally obtain the product; in the production of the current process The heating of the silicon core is achieved by applying a voltage below 3kV to the electrodes at both ends of the sil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035F27B17/00F27D19/00
CPCC01B33/035F27B17/00F27D19/00F27D2019/0003Y02P20/10
Inventor 周昆游俊廖丰杰张义彭小树
Owner SICHUAN HOT PULSE MICROWAVE SCI & TECH CO LTD
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