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New device and method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains

An imaging detection and semiconductor technology, which is used in measurement devices, optical testing of flaws/defects, and material analysis by optical means, can solve problems such as increasing the difficulty of implementing detection systems, and achieve compact structure, small size, and convenient use.

Pending Publication Date: 2020-05-01
QUANZHOU NORMAL UNIV
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Problems solved by technology

[0008] In the scheme proposed by the applicant in previous patent applications (patent application numbers 201910207016.2, 201911247575.2), since the optical path difference △ of double-sided simultaneous imaging detection is related to the structural parameters (L1, L2), when the structural parameters are large, the method Inevitably there are certain limitations in use; the above two applications use a larger right-angle transfer prism and a large depth-of-field telecentric imaging lens to solve the resolution problems caused by simultaneous detection of adjacent surfaces and their optical path difference, such as Figure 1a , as shown in 1b, and the recently submitted patent application (application number 201911369253.5), the adjacent two sides also need to use a larger right-angle transfer prism (such as 30×30×15) and a smaller transfer prism ( such as 15x15×15), such as Figure 1c As shown, however, in order to obtain equal optical path imaging detection, it is necessary to carefully select relevant structural layout parameters when designing the optical path, which limits the freedom of optical path design, or increases the difficulty of implementing the detection system to a certain extent.

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  • New device and method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains
  • New device and method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains
  • New device and method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains

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Embodiment Construction

[0049] The novel device for simultaneously quasi-equal optical path confocal imaging detection of adjacent surfaces of semiconductor crystal grains of the present invention includes a camera 1, a telecentric imaging lens 2, a semi-transparent and semi-reflective image combiner 3, and a semiconductor grain 6 arranged in sequence in the direction of the optical path And be used for carrying the transparent stage 5 of semiconductor crystal grain, on the optical path between semiconductor crystal grain 6 and transflective image combiner 3, be respectively provided with the first right angle relay prism 4b and the second right angle relay image Prism 4a, the first right-angle transfer prism 4b and the second right-angle transfer prism 4a are located at the peripheral side of the semiconductor crystal grain 6, and the first right-angle transfer prism 4b and the semi-transparent and half-reflection image combiner 3 are located at the telecentric imaging lens 2 on the optical axis A, a...

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Abstract

The invention discloses a new method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains. A detection device comprises a camera, a telecentric imaging lens, a semi-transparent and semi-reflective image combiner, the semiconductor crystal grains and a transparent object stage for bearing the semiconductor crystal grains which are sequentially arranged in a direction of a light path; a first right-angle transferring prism and a second right-angle transferring prism are respectively arranged on the light path between the semiconductor crystal grains and the semi-transparent and semi-reflective image combiner, the second right-angle transferring prism is positioned at a first side part of the optical axis of the telecentric imaging lens, the two right-angle surfaces of the two right-angle transferring prisms are respectively vertical to the light path, at least two surfaces of the semiconductor crystal grains are respectively imaged at different area positions on a sensor surface of the camera through the right-angle transferring prisms and the semi-transparent and semi-reflective image combiner by double light paths, and thedistance delta between the double images of the adjacent surfaces is adjustable.

Description

Technical field: [0001] The invention belongs to the fields of optical detection and machine vision, and in particular relates to a new device and method for simultaneous quasi-equal optical path confocal imaging detection of adjacent surfaces of semiconductor crystal grains. Background technique: [0002] In the application of machine vision imaging inspection, when the object to be inspected is large, a telecentric imaging lens with a suitable field of view is usually selected at one station to inspect one surface of the object; when the object to be inspected is small (such as semiconductor optoelectronic components) , in order to improve the detection speed and make full use of the effective field of view of the telecentric imaging lens, a technical solution of simultaneously detecting two surfaces of the object with one telecentric imaging lens on one station is adopted. [0003] The main technical problems to be solved by the device and method for simultaneous defect d...

Claims

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Application Information

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IPC IPC(8): G01N21/01G01N21/95
CPCG01N21/01G01N21/9505
Inventor 廖廷俤陈武付宝玉
Owner QUANZHOU NORMAL UNIV
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