New device and method for simultaneous quasi-aplanatic imaging confocal detection of adjacent surfaces of semiconductor crystal grains
An imaging detection and semiconductor technology, which is used in measurement devices, optical testing of flaws/defects, and material analysis by optical means, can solve problems such as increasing the difficulty of implementing detection systems, and achieve compact structure, small size, and convenient use.
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[0049] The novel device for simultaneously quasi-equal optical path confocal imaging detection of adjacent surfaces of semiconductor crystal grains of the present invention includes a camera 1, a telecentric imaging lens 2, a semi-transparent and semi-reflective image combiner 3, and a semiconductor grain 6 arranged in sequence in the direction of the optical path And be used for carrying the transparent stage 5 of semiconductor crystal grain, on the optical path between semiconductor crystal grain 6 and transflective image combiner 3, be respectively provided with the first right angle relay prism 4b and the second right angle relay image Prism 4a, the first right-angle transfer prism 4b and the second right-angle transfer prism 4a are located at the peripheral side of the semiconductor crystal grain 6, and the first right-angle transfer prism 4b and the semi-transparent and half-reflection image combiner 3 are located at the telecentric imaging lens 2 on the optical axis A, a...
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