Unlock instant, AI-driven research and patent intelligence for your innovation.

A 5G RF front-end power switching chip compatible with apt and et mode

A radio frequency front-end and power switching technology, applied in the field of power supply, can solve the problem of harsh capacitive load and achieve the effect of reducing capacitive load

Active Publication Date: 2021-03-09
RADROCK CHONGQING TECH CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the 5G ET system, the linearity of the PA is guaranteed through the shaping function or digital pre-distortion technology (Digital Pre-Distortion, DPD), but the envelope tracker module (Envelop tracker) has a relatively large impact on the capacitive load on the PA side. demanding

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A 5G RF front-end power switching chip compatible with apt and et mode
  • A 5G RF front-end power switching chip compatible with apt and et mode
  • A 5G RF front-end power switching chip compatible with apt and et mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The 5G RF front-end power switching chip compatible with APT and ET modes provided in this embodiment includes a first switch M1, a second switch M2, and a third switch M3, and the first switch M1, the second switch M2, and the third switch M3 respectively include high Power supply terminal, low power supply terminal and control terminal; such as figure 1 As shown, the connection relationship between the switches is: the control terminal of the third switch M3 and the control terminal of the first switch M1 are respectively used to load the control voltage APT_Enable, and the high power terminal of the third switch M3 is connected to the control of the second switch M2 terminal, the low power terminal of the third switch M3 is grounded; the high power terminal of the second switch M2 is used for power loading, and the low power terminal of the second switch M2 is connected to the high power terminal of the first switch M1, and connected to the lower circuit as an output ...

Embodiment 2

[0022] The 5G RF front-end power switching chip compatible with APT and ET modes provided in this embodiment includes all the technical features in Embodiment 1, and also includes a resistor R1 and a capacitor C1. Such as figure 2 As shown, the control power loaded on the control terminal of the first switch M1 is grounded through the resistor R1 and the capacitor C1.

[0023] The resistor R1 and the capacitor C1 ensure the stability of the voltage loaded on the control terminal of the first switch M1 and reduce the influence of voltage fluctuations.

Embodiment 3

[0025] The 5G RF front-end power switching chip compatible with APT and ET modes provided in this embodiment includes all the technical features in Embodiment 1 and Embodiment 2, and also includes a power supply connected in series between the high power terminal and the control terminal of the second switch M1. Resistor R2, respectively, as image 3 as shown, Figure 4 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a 5G radio frequency front-end power switching chip compatible with APT and ET modes, the chip includes a first switch M1, a second switch M2 and a third switch M3, the first switch M1, the second switch M2 and the third switch M3 respectively include a high power supply terminal, a low power supply terminal and a control terminal; the control terminal of the third switch M3 and the control terminal of the first switch M1 are respectively used to load a control voltage, and the third The high power end of the switch M3 is connected to the control end of the second switch M2, the low power end of the third switch M3 is grounded; the high power end of the second switch M2 is used for power loading, and the second switch M2 The low power supply terminal of the first switch M1 is connected to the high power supply terminal of the first switch M1 and serves as an output terminal; the low power supply terminal of the first switch M1 is grounded. The power switch chip provided by the present invention realizes the compatibility of the most commonly used APT power mode and ET power mode in 5G radio frequency power amplifiers.

Description

technical field [0001] The invention relates to the field of power supplies, in particular to a 5G radio frequency front-end power switching chip compatible with APT and ET modes. Background technique [0002] The radio frequency power amplifier is an important part of the radio frequency front end, and the electronic terminal can obtain higher radio frequency output power through the radio frequency power amplifier. Among them, in order to ensure better working efficiency of the power supply under higher radio frequency output power, the power consumption of the radio frequency power amplifier can be reduced by adjusting the voltage of the power amplifier in real time to adapt to the power variation of the radio frequency amplifier. The two most commonly used voltage management systems in the industry are Average Power Tracking (APT) technology and Envelope Tracking (Envelope Tracking, ET) technology. voltage, thereby improving work efficiency. The key performance goal of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/30H03F1/32H03F1/02H03F1/08
CPCH03F1/0205H03F1/083H03F1/303H03F1/32
Inventor 胡自洁曹原倪楠倪建兴
Owner RADROCK CHONGQING TECH CO LTD