Supercharge Your Innovation With Domain-Expert AI Agents!

OTP memory and manufacturing method thereof

A manufacturing method and memory technology, applied in read-only memory, static memory, semiconductor/solid-state device manufacturing, etc., can solve the problems of large storage unit area, unfavorable application of high density of kilobit level, etc., and improve the writing speed. , read the effect of simple and fast operation

Active Publication Date: 2020-05-08
HUA HONG SEMICON WUXI LTD
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the existence of the floating gate coupling capacitance in the existing first OTP memory, the storage unit area is too large, which is not conducive to the high-density application of the thousand-bit level

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • OTP memory and manufacturing method thereof
  • OTP memory and manufacturing method thereof
  • OTP memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] like Figure 4 Shown, is the layout of the OTP memory of the embodiment of the present invention; As Figure 5 As shown, it is the OTP memory edge of the embodiment of the present invention Figure 4 A cross-sectional view of line AA; the cell structure of the OTP memory according to the embodiment of the present invention includes: a first active region 201 and a second active region 202 .

[0069] The first active region 201 and the second active region 202 vertically intersect each other.

[0070] EDNMOS is formed in the first active region 201 , and PMOS is formed in the second active region 202 .

[0071] The EDNMOS includes a first source region 205, a first channel region 206, a drift region 207, a first drain region 209 and a first gate structure, and the first gate structure is composed of a first gate dielectric layer 214a and a first Polysilicon gates 203 are superimposed, the direction between the first source region 205 and the first drain region 209 is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an OTP memory. A unit structure comprises a first active region and a second active region which are vertically intersected, an EDNMOS is formed in the first active region, anda PMOS is formed in the second active region; a main body part of a channel region of the PMOS is composed of a drift region of an EDNMOS, a first polysilicon gate of the EDNMOS serves as a control gate, and a second polysilicon gate of the PMOS serves as a floating gate; and programming of the PMOS is performed by utilizing hot carriers formed in the drift region of the EDNMOS. The invention further discloses a manufacturing method of the OTP memory. High-speed writing can be realized.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a one-time programmable (one-time programmable memory, OTP) memory; the invention also relates to a method for manufacturing the OTP memory. Background technique [0002] OTP memory is a common non-volatile memory (NVM), which has more applications in embedded NVM with limited density and limited performance. Traditional electrically erasable programmable read-only memory (EEPROM), S0NOS, embedded flash memory (E-Flash) NVM is expensive. OTP memory and CMOS-compatible embedded NVM technology is a successful solution in the current industry, and it has been widely used in applications such as analog technology trimming from the bit level to the kilobit level of data or code storage. . [0003] There are many types of structural designs of OTP memory cells. There are three main types of representative ones: [0004] The first type is the capacitive ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/112
CPCH10B20/30H10B20/25H01L29/7885H01L29/42324H01L21/26513G11C17/08G11C16/0433
Inventor 刘俊文陈华伦
Owner HUA HONG SEMICON WUXI LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com