High-energy ion implanter beam current adjusting device and method
A technology of high-energy ion and adjustment device, applied in discharge tubes, electrical components, circuits, etc., can solve the problems of reduced production efficiency of high-energy ion implanter, long adjustment process, and long time, so as to avoid the failure of menu parameters and realize fully automatic The effect of adjusting and improving production efficiency
Active Publication Date: 2020-05-12
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Due to the long adjustment process of the two sub-menus, it takes a long time to build the menu, and the production efficiency of the high-energy ion implanter is reduced
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0058] In the embodiments of the present invention, divalent arsenic ions are used as an example for illustration. Among them, it is assumed that when the ion implantation energy is 2200Kev and the ion beam current size is 200 μA, the ion beam current size in the corresponding parameters of the first Faraday unit 205 and the second Faraday unit 206 in the packaged optimal menu parameters is 2000 μA, and the ion beam current size is 2000 μA. The shape of the flow is a circle, and the ion position parameters are (200, 200); the position parameters of the suction electrode 202 are (320, 400, 530); the main parameters of the ion source unit 201 are the flow rate of 0.85ccm, the ionization voltage of 66Kv and the ionization current of 1.5mA.
[0059] That is to say, when using this optimal menu to turn on the beam, the position of the suction electrode 202 is (320, 400, 530); the main parameters of the ion beam sent by the ion source unit 201 are the flow rate of 0.85ccm, the ioniza...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a high-energy ion implanter beam current adjusting device and method. The device comprises an ion source unit, a suction electrode, a magnetic analyzer, a first Faraday unit, asecond Faraday unit, a feedback adjusting unit, an acceleration unit, a focusing unit, a scanning unit, a deflection unit, a lens group and a target chamber. Ions are sucked out by a suction electrodebeside the ion source unit, the first Faraday unit is used for measuring ion beam current size parameters, and the second Faraday unit is arranged in front of the acceleration unit and used for measuring ion beam current shape and position parameters. The feedback adjusting unit receives the ion beam current measured by the first Faraday unit; and the shape and the position of the ion beam current measured by the second Faraday unit, by adjusting the internal parameters of the ion source unit, the position parameters of the suction electrode and / or the parameters of the magnetic analyzer, thesize, the shape and the position parameters of the ion beam current before entering the acceleration unit are controlled to meet the requirements of the size, the shape and the position parameters ofthe ion beam current in the optimal menu of the acceleration unit.
Description
technical field [0001] The invention belongs to the field of integrated circuit manufacturing and relates to ion implantation technology, in particular to a device and method for adjusting the beam current of a high-energy ion implanter. Background technique [0002] With the shrinking of integrated circuit manufacturing process nodes, ion implantation technology has gradually replaced the diffusion process due to its great advantages in the controllability of doping concentration, doping size and doping angle, and has become a must in the integrated circuit manufacturing process. less technical. Ion implantation technology ionizes gas molecules into ions, then accelerates the ions to the target energy through the acceleration unit, and finally implants them on the surface of the silicon wafer. During the ion implantation process, the implantation depth can be controlled by controlling the ion energy, and the implantation time and implantation dose can be controlled by cont...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01J37/24H01J37/317
CPCH01J37/3171H01J37/243
Inventor 陈张发曾绍海
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT