Double-power-source and double-anode electroplating device and method for filling through holes of glass adapter plate

Abstract

The invention discloses a double-power-source and double-anode electroplating device for filling through holes of a glass adapter plate. The double-power-source and double-anode electroplating devicecomprises an electroplating groove, a first anode, a second anode, a first power source and a second power source, wherein the first anode and the second anode are placed in the electroplating grooveand distributed at two sides of the glass adapter plate; an anode of the first power source is connected to the first anode; an anode of the second power source is connected to the second anode; and cathodes of the first power source and the second power source are both connected to the glass adapter plate. The double-power-source and double-anode electroplating device simultaneously performs electroplating and filling on two ends of each of the through holes through the arrangement of the two anodes and the two power sources for electroplating, thereby achieving efficient filling of the through holes. Especially for the situation that the through holes are oblique holes, the double-power-source and double-anode electroplating device can separately change the electric current density on two sides of each of the oblique holes of the adapter plate by adjusting the electric current intensity of the first power source and the second power source, thereby adjusting the electroplating rate on two sides of each of the oblique holes of the adapter plate and achieving efficient non-hole filling of the oblique holes.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing and processing, and in particular relates to a dual-power-supply dual-anode electroplating device and method for filling through holes of a glass adapter plate. Background technique [0002] With the rapid development of the integrated circuit manufacturing industry, the demand for miniaturization and integration of microsystems is increasingly urgent. Three-dimensional packaging with the advantages of high-speed interconnection and high-density integration has become a research hotspot. Silicon-based TSV interposers play an important role in the development of 2.5D and 3D packaging structures. With the high-frequency and high-speed development of integrated circuits and the development of 5G technology, the demand for signal integrity is gradually increasing. Compared with silicon-based interposer, glass interposer has the characteristics of high resistivity, which can improv...

AI Technical Summary

Problems solved by technology

At present, most of the through-hole plating of glass interposer boards use single-anode plate plating. Because the distance between the two ends of the through-hole and the anode is different, it is difficult to achieve high-efficiency filling of the through-hole.

Especially for the case where the through hole is a slanted hole, since the pore diameters at both ends of the slanted hole are different, the distance between the two ends of the slanted hole and the anode is also different, so it is more difficult to achieve high-efficiency filling of the slanted hole

The electroplating process of the through hole of the glass interposer is not yet mature, which restricts the application and development of the interposer

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