105results about How to "Shorten plating time" patented technology

In a multilayer ceramic electronic component, when a region of a ceramic body in layers where neither of a first internal electrode and a second internal electrode is provided as viewed in a direction in which a plurality of ceramic layers are stacked on one another is defined as a non-effective layer region, a dummy lead-through conductor is arranged in the non-effective layer region so as to lead to at least two locations on portions of superficies of the ceramic body and be electrically connected to a second external electrode. When a conductive medium is brought into contact with one of a plurality of exposed edges of the dummy lead-through conductor, a current is also applied to the other exposed edges.

Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.

A plate material conveyance apparatus, disposed next to a plate processing machine, includes an unprocessed plate material placement unit, a processed plate material placement unit, a loader, an unloader and a temporary placement table. The loader reciprocally moves between the unprocessed plate material placement unit and the plate processing machine to deliver an unprocessed plate material onto the plate processing machine. The unloader reciprocally moves in parallel to and below the loader between the unprocessed plate material placement unit and the plate processing machine, and delivers a processed plate material from the plate processing machine to the temporary placement table positioned above the unprocessed plate material placement unit. The temporary placement table slides between the unprocessed plate material placement unit and the plate processing machine, and transfers the processed plate material, received from the unloader, to the processed plate material placement unit.

A silicon interposer producing method comprising the steps of forming through holes 12 in a silicon wafer 11, forming an oxide coating 13 on the silicon wafer 11, providing a power feeding layer 14 for plating on one of the surfaces of the through holes 12, supplying a low thermal expansion filler 15 having a thermal expansion coefficient lower than the thermal expansion coefficient of the conductive material 16 of through-hole electrodes 17 to the through holes 12, filling the conductive material 16 into the through holes 12 by plating to form the through-hole electrodes 17, and removing the power feeding layer 14 for plating.

The invention discloses a method for carrying out one-side copper plating on a wide stainless steel band and an electroplating bath. The method comprises the following steps: carrying out oil removal and activation on the pre-plating surface of the stainless steel band of a substrate; carrying out nickel pre-plating and general nickel plating on the activated pre-plating surface of the stainless steel band of the substrate, and carrying out copper plating in an alkaline cyanide-free plating solution; passivating and drying the copper-plated stainless steel band. The improved electroplating bath is adopted in the copper plating process, at least two transmission rotary rollers are hermetically mounted on two groove walls at a transmission inlet and a transmission outlet of the electroplating bath respectively, and the electroplating bath can be used for guaranteeing the liquid level of the bath and preventing a plated layer of the stainless steel band from being scratched and is especially suitable for continuous one-side copper plating of the wide band-shaped stainless steel band. The method is safe, environment-friendly, low in cost and capable of carrying out high-speed one-side copper plating on the wide stainless steel band; the one-side plated layer of the stainless steel band, prepared by the method, is uniform, bright and compact in surface, good in corrosion resistance, high in electric conductivity and excellent in stamping resistance, meets the requirements of electronics and military industry, and can be industrially produced.