Fully-integrated high-side driving circuit

Abstract

The invention discloses a fully-integrated high-side driving circuit. The level shifter raises a gate control signal under the low power supply voltage power supply rail to the high power supply voltage power supply rail. A first control signal with the phase opposite to that of the gate control signal is then obtained through three inverters with amplification functions; the first control signalpasses through a fourth phase inverter with an amplification function to obtain a second control signal with the same phase as the grid control signal, the second control signal passes through a second capacitor to increase voltage to obtain a third control signal, and the third control signal passes through a first voltage-withstanding PMOS tube to obtain a grid driving signal of a high-side power tube; the first PMOS tube is used as an enable tube and is controlled by the first control signal, and the first NMOS tube and the second NMOS tube are controlled in a cross coupling manner, so thata high-speed and quick charging path is provided for the first capacitor and the second capacitor; the first control signal controls the corresponding discharge branch to discharge the gate drive signal as required; and when the gate control signal jumps low, the gate drive signal is controlled to discharge, and after the gate control signal jumps high, the gate drive signal is controlled to charge.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and in particular relates to a fully integrated high-side drive circuit without an off-chip bootstrap capacitor. Background technique [0002] Active control gate drive circuit is one of the core circuits of half-bridge applications (such as synchronous buck converter), which directly affects the reliability and performance index of switching power supply. For high-side power transistors, N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) have higher drive efficiency and smaller device area than P-type metal-oxide-semiconductor field-effect transistors (PMOSFETs), so NMOSFETs More suitable as a power transistor. [0003] The traditional high-side NMOSFET driver first uses an off-chip bootstrap circuit to make a SW+5V floating power rail, and then uses a level shifter to raise the 0~VDDH signal to SW~SW+5V, and outputs the SW+5V driving voltage Driving high-s...

AI Technical Summary

Problems solved by technology

Therefore, conventional driving methods are not suitable for applications with high speed, high reliability and miniaturization

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