A fully integrated high-side drive circuit
A driving circuit, fully integrated technology, applied in the direction of electrical components, output power conversion devices, etc., can solve the problem that the driving method is not suitable for high speed, high reliability and miniaturization, to improve safety and stability, expand applications, simplify design effect
Active Publication Date: 2021-03-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
Therefore, conventional driving methods are not suitable for applications with high speed, high reliability and miniaturization
Method used
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[0019] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.
[0020] Such as figure 1 Shown is a fully integrated high-side drive circuit proposed by the present invention, including a level shifter, a first inverter INV1, a second inverter INV2, a third inverter INV3, a fourth inverter INV4, The first resistor R1, the second resistor R2, the third resistor R3, the first capacitor C1, the second capacitor C2, the third capacitor C3, the first NMOS transistor MN1, the second NMOS transistor MN2, the first PMOS transistor MP1, the first The voltage-resistant PMOS transistor MHP1 and the discharge branch, the input terminal of the level shifter is used as the input terminal of the fully integrated high-side drive circuit to connect the gate control signal H_ctrl, and its output terminal is connected to the input terminal of the first inverter INV1; the gate The power rail of the control signal H_ctrl is th...
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A fully integrated high-side drive circuit, the level shifter lifts the gate control signal under the low power supply voltage power rail to the high power supply voltage power rail, and then passes through three inverters with amplifying function to get the opposite gate control signal. The first control signal of the phase, the first control signal passes through a fourth inverter with amplifying function to obtain the second control signal in the same phase as the gate control signal, and the second control signal is raised by the second capacitor to obtain the third control signal. , the third control signal obtains the gate drive signal of the high-side power tube through the first withstand voltage PMOS tube; the first PMOS tube is used as an enabling tube and is controlled by the first control signal, and the first NMOS tube and the second NMOS tube are controlled by cross-coupling, Provide a high-speed and fast charging path for the first capacitor and the second capacitor; the first control signal controls the corresponding discharge branch to discharge the gate drive signal when needed; when the gate control signal jumps low, it controls the gate drive signal to discharge , after the gate control signal jumps high, it controls the charging of the gate drive signal.
Description
technical field [0001] The invention belongs to the technical field of analog integrated circuits, and in particular relates to a fully integrated high-side drive circuit without an off-chip bootstrap capacitor. Background technique [0002] Active control gate drive circuit is one of the core circuits of half-bridge applications (such as synchronous buck converter), which directly affects the reliability and performance index of switching power supply. For high-side power transistors, N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) have higher drive efficiency and smaller device area than P-type metal-oxide-semiconductor field-effect transistors (PMOSFETs), so NMOSFETs More suitable as a power transistor. [0003] The traditional high-side NMOSFET driver first uses an off-chip bootstrap circuit to make a SW+5V floating power rail, and then uses a level shifter to raise the 0~VDDH signal to SW~SW+5V, and outputs the SW+5V driving voltage Driving high-s...
Claims
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IPC IPC(8): H02M1/08
CPCH02M1/08
Inventor 周泽坤王佳妮金正杨王韵坤石跃王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA