TSV vacuum laminating method, apparatus, and bonding system using same

Abstract

The present invention relates to a method for performing a laminating process for a TSV process. A technical point of the laminating method for the TSV process is to provide a vacuum laminating methodfor the TSV process, which includes: an adhesive film supplying step of supplying an adhesive film by using a transfer roller; an adhesive film cutting step of cutting the adhesive film into a predetermined shape by using a cutter; a primary protective film peeling step of bonding the adhesive film cut in the predetermined shape to a lower portion of an adhesive chuck to peel a primary protectivefilm formed on a lower portion of the adhesive film; an adhesive chuck separation step in which the adhesive chuck is separated from the adhesive film after the adhesive film, where the primary protective film is peeled off, is transferred to a vacuum laminator by the adhesive chuck and seated on the top of a carrier wafer; a vacuum laminating step of laminating the carrier wafer and the adhesivefilm seated on the top of the carrier wafer; and a secondary protective film peeling step of peeling a second protective film formed on the top of the adhesive film. Accordingly, the adhesive film and the carrier wafer are laminated in a vacuum state, thereby minimizing dusts and particles, so that high quality laminating is implemented.

Description

technical field [0001] The invention is used to implement a lamination process for a through silicon via (TSV, through silicon via) process, and relates to a vacuum lamination method for a TSV process, a vacuum laminating apparatus (vacuum laminating apparatus) for a TSV process, and bonding using the same The system, the above method, apparatus and system can perform lamination of an adhesive film and a carrier wafer in a vacuum state, thereby minimizing generation of dust and particles, thereby enabling high-quality lamination. Background technique [0002] So far, researches on improving the integration degree of semiconductor devices have been continuously carried out. However, due to the physical limitations of exposure devices used to form circuit patterns, researchers in the field are faced with the difficult reality that they cannot further improve the integration level with existing equipment and methods. [0003] Recently, some new technologies that can improve th...

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Problems solved by technology

[0014] Also, in the past, peeling was performed on the upper side of the temporary adhesive film, so that particles fell on the peeled temporary adhesive film, resulting in a decrease in lamination quality

[0015] In addition, the overall process layout in the past is very complicated for supplying, cutting and peeling the temporary adhesive film, arranging it, and then laminating, bonding and debonding the carrier wafer, which also makes the device complicated. , large-scale, which makes it difficult to maintain, manage and repair, and the efficiency of the entire process is low, which leads to a decrease in throughput

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