Transverse field effect transistor

Abstract

The embodiment of the invention discloses a lateral field effect transistor. The lateral field effect transistor comprises a semiconductor layer, a well region, a body region, a source region, a drainregion, a gate structure and a trench Schottky barrier structure. The trench Schottky barrier structure longitudinally extends from the upper surface of the well region to penetrate through the source region, the body region and at least one part of the well region, so that longitudinal Schottky contact is formed between the side wall of the trench Schottky barrier structure and the well region.The longitudinal Schottky contact can be manufactured simultaneously with the lateral field effect transistor based on the process steps of manufacturing the lateral field effect transistor. The transverse size of the transverse field effect transistor integrated with the Schottky diode can be greatly reduced, so that the requirements of an integrated circuit application that the size and the volume of the transverse field effect transistor are smaller and smaller and the reverse leakage/reverse substrate injection suppression capability is good can be better met.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly to lateral field effect transistors. Background technique [0002] Lateral transistors, especially lateral double-diffused metal-oxide-semiconductor field-effect transistors (LDMOS), are widely used in various integrated power management circuits. However, the reverse recovery phenomenon of the body diode of the traditional lateral field effect transistor (such as LDMOS) will increase the power consumption of the LDMOS when it works as a switching device (especially when it works at a high switching frequency). Therefore, the current integrated circuit applications require lateral field effect transistors to have smaller and smaller sizes and volumes while having good reverse leakage / reverse substrate injection suppression capabilities and low switching losses. Contents of the invention [0003] Embodiments of the present disclosure provide a lateral field ef...

AI Technical Summary

Problems solved by technology

However, the reverse recovery phenomenon of the body diode of the traditional lateral field effect transistor (such as LDMOS) will le

Images