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Temperature measuring method for semiconductor radio frequency processing device

A technology of radio frequency processing and temperature measurement, which is applied in the direction of using electrical devices, thermometers using directly heat-sensitive electric/magnetic components, semiconductor/solid-state device manufacturing, etc., can solve the problem of small current signal noise of temperature sensors, affecting judgment results, The temperature sensor of the heating plate cannot accurately reflect the temperature of the plate body and other problems

Active Publication Date: 2020-06-05
PIOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical operation, when the radio frequency signal of the plasma processing equipment is turned on, the temperature sensor of the heating plate cannot accurately reflect the real plate temperature, resulting in the effect of temperature control not being as expected
The reason for this is that compared with the strength of the RF signal, the small current signal processed by the temperature sensor is easily interfered by the RF signal and generates noise, thus affecting the judgment result

Method used

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  • Temperature measuring method for semiconductor radio frequency processing device
  • Temperature measuring method for semiconductor radio frequency processing device
  • Temperature measuring method for semiconductor radio frequency processing device

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Embodiment Construction

[0016] The present invention is described in detail in the following specific embodiments in conjunction with the accompanying drawings. Sufficient detail is provided to enable those skilled in the art to practice the specific embodiments, but it is understood that other specific embodiments may be utilized, and other changes may be made, without departing from the spirit or scope thereof. Furthermore, although it may be, references to "an embodiment" are not intended to be limiting to the same or singular embodiment. Therefore, the following detailed description is not intended to be limiting, and the scope of the specific embodiments described is defined only by the scope of the claims.

[0017] Figure 1 to Figure 2 The schematic diagrams of two embodiments of the semiconductor radio frequency processing device are respectively shown. In both versions, the RF processing device includes a housing 100 that forms a chamber to house devices and components for various processi...

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Abstract

A temperature measuring method for a semiconductor radio frequency processing device comprises the steps: an electrode generates a radio frequency signal sequence, wherein the radio frequency signal sequence comprises a plurality of discontinuous radio frequency signals, and any radio frequency signal is separated from the next radio frequency signal by a time interval; and a temperature sensing signal is generated by the temperature sensor during the time interval.

Description

technical field [0001] The present invention relates to a semiconductor radio frequency processing device, in particular to a temperature measurement method for the semiconductor radio frequency processing device. More specifically, it is about the temperature measurement method of the wafer heating plate. Background technique [0002] A plasma processing apparatus for wafer processing includes a radio frequency (RF) control circuit. The radio frequency control circuit is configured to provide radio frequency signals to electrodes in the plasma processing apparatus to generate electric fields in a processing region in a processing chamber. The reactive gas is ionized by the application of an electric field and reacts with the wafer to be processed, such as etching or deposition. Generally, an RF control circuit includes an RF signal generator and an impedance matching circuit, wherein the impedance matching circuit has resistive components, capacitive components, inductive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/16H01J37/32
CPCG01K7/16H01J37/32431H01J37/32522H01J37/32724H01J37/32183H01L21/67103H01L21/67248G01K13/00H01J2237/2001
Inventor 荒见淳一周仁
Owner PIOTECH CO LTD
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