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Method for predicting internal oxidation morphology of ceramic-based composite material in stress oxidation environment

A composite material and internal oxidation technology, applied in the field of composite materials, can solve the problem of inability to accurately predict the oxidation morphology of ceramic matrix composite materials

Pending Publication Date: 2020-06-05
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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Problems solved by technology

[0009] The present invention provides a method for predicting the internal oxidation morphology of ceramic matrix composite materials in a stress oxidation environment to solve the problem in the prior art that the internal oxidation morphology of ceramic matrix composite materials cannot be accurately predicted in a stress oxidation environment

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  • Method for predicting internal oxidation morphology of ceramic-based composite material in stress oxidation environment
  • Method for predicting internal oxidation morphology of ceramic-based composite material in stress oxidation environment
  • Method for predicting internal oxidation morphology of ceramic-based composite material in stress oxidation environment

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Embodiment Construction

[0101] Below in conjunction with embodiment the present invention will be further described.

[0102] In this example, the internal oxidation morphology change of the unidirectional SiC / SiC composite material oxidized for 4 hours in an oxidizing environment at 900° C. under a loading condition of 200 MPa was predicted.

[0103] A method for predicting the internal oxidation morphology of a ceramic matrix composite material in a stress oxidation environment, specifically comprising the following steps:

[0104] Step (1), determining the number of cracks in the ceramic matrix composite material matrix: considering the thermal residual stress, according to the stress of the matrix under the action of tensile stress, calculating the variation law of the number of cracks in the unidirectional ceramic matrix composite material matrix with stress;

[0105] Step (1) specifically includes the following steps:

[0106] The strength of the unidirectional SiC / SiC composite matrix has a c...

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Abstract

The invention discloses a method for predicting the internal oxidation morphology of a unidirectional SiC / SiC composite material in a stress oxidation environment. On the basis of the mass transfer theory, morphology change of an oxidation notch of a C interface at the initial stage of a crack is considered; after the oxidation notch reaches the SiC fiber, a volume equivalent method is used for enabling the arc-shaped oxidation notch to be equivalent to a rectangular notch; oxygen consumed by SiC fiber oxidation is added into an established control volume equation, so that a model is closer tothe actual situation; the method can accurately predict the oxidation of the internal crack wall of the ceramic-based composite material after any time of stress oxidation, the time when oxygen begins to oxidize the fiber, and the oxidation morphology of the fiber, the interface and the matrix after entering the bottom of the crack, and provides theoretical support for later calculation of the residual mechanical properties of the ceramic-based composite material in the stress oxidation environment.

Description

technical field [0001] The invention belongs to the technical field of composite materials, and in particular relates to a method for predicting internal oxidation morphology of ceramic matrix composite materials in a stress oxidation environment. Background technique [0002] Silicon carbide fiber reinforced silicon carbide ceramic matrix composites (Continuous silicon carbide fiber reinforced silicon carbide composites, referred to as SiC / SiC) has excellent properties such as high temperature resistance, low density, high specific strength, high specific modulus, etc. It has a wide application prospect on components such as nozzle adjustment pieces. [0003] Due to the good compatibility of carbon with silicon carbide fibers and matrix, it is widely used as an interface phase in SiC / SiC materials. SiC / C / SiC materials are currently mainly used in high temperature (>900°C) stress oxidation environments. In this environment, due to the presence of stress, the matrix will...

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Application Information

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IPC IPC(8): G16C10/00G16C60/00
CPCG16C10/00G16C60/00Y02P10/20
Inventor 宋迎东陈西辉丁俊杰牛序铭孙志刚靳彧
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS