Super junction device and manufacturing method thereof
A manufacturing method and super-junction technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of net doping concentration reduction, device performance degradation, etc., and achieve compensation for doping loss, elimination of leakage, and high Effect of doping concentration
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[0058] The super junction device according to the first embodiment of the present invention:
[0059] like figure 1 As shown, it is a schematic structural diagram of the super junction device according to the first embodiment of the present invention; the device unit area of the super junction device according to the first embodiment of the present invention includes:
[0060] The super junction is composed of alternately arranged P-type pillars 5 and N-type pillars, and a super-junction unit is composed of one of the P-type pillars 5 and an adjacent N-type pillar.
[0061] The P-type pillar 5 is composed of a P-type epitaxial layer filled in the super junction trench 4, the N-type pillar is composed of a first N-type epitaxial layer 2 located between the P-type pillars 5, and the super junction Junction trenches 4 are formed in the first N-type epitaxial layer 2 ; surface defects generated by filling the super junction trenches 4 are easily formed on the surface of the sup...
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