VCSEL device with transparent top lining, back positive electrode and back negative electrode, and preparation method thereof
A positive and negative electrode, backside technology, applied in the field of VCSEL devices and their preparation, can solve the problems of increasing inductance, the effect of light extraction efficiency, and the need for wire bonding.
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[0072] Example 1
[0073] This embodiment provides a VCSEL device with a sapphire transparent top liner and positive and negative electrodes on the back and a preparation method thereof, such as figure 1 As shown, yellow light process, P-type ohmic metal layer 5 evaporation, first passivation layer 4 deposition and etching process are sequentially performed on the front side of the epitaxial layer to etch through the quantum well layer 2, and part of the N-type DBR layer 3 is etched to form trenches. The trench 22, the mesa structure of the VCSEL unit and the corresponding light-emitting area are then subjected to an oxidation process to form an oxide layer 19, and the material of the P-type ohmic metal layer is Ti.
[0074] Such as figure 2 As shown, a second passivation layer 9 is deposited on the first passivation layer 4, and the second passivation layer 9 is etched to expose the P-type ohmic metal layer 5.
[0075] Such as image 3 As shown, a front seed metal layer 10 and an e...
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