VCSEL device with transparent top lining, back positive electrode and back negative electrode, and preparation method thereof

Abstract

The invention provides a VCSEL device with a transparent top lining, a back positive electrode and a back negative electrode and a preparation method of the VCSEL device. The VCSEL device comprises: an oxidation channel on an epitaxial layer, a VCSEL unit mesa structure defined by the oxidation channel, a transparent top lining positioned on the epitaxial layer, an optical element arranged on thetransparent top lining, and a through hole formed in the back surface of the epitaxial layer; and the back surface of the epitaxial layer comprises a positive electrode and a negative electrode. According to the invention, the main manufacturing process can be completed by bonding the top substrate on the front surface once and then removing the back surface substrate; according to the device, therequirement on the accuracy of back photoetching in the front side and the manufacturing process of emergent light is relatively low; and the positive electrode and the negative electrode are locatedon the back face, routing is not needed during packaging, surface mounting is conducted directly, and direct attachment to other components such as drivers is facilitated.

Description

technical field [0001] The invention relates to the technical field of vertical cavity surface emitting lasers (VCSEL), in particular to a VCSEL device with a transparent top lining and positive and negative electrodes on the back and a preparation method thereof. Background technique [0002] At present, in many smart devices such as smart phones, there is a huge market demand for flat-top infrared illumination (IR) projection modules. This module plays a vital role in specific applications such as TOF measurement and security camera equipment. The vertical cavity The Surface Emitting Laser (VCSEL) is the core device in the flat-top infrared lighting projection module. [0003] Existing VCSEL devices generally use the back side to emit light, and the positive and negative electrodes are located on the front side. During the device manufacturing process, after the front side is etched, it is usually necessary to bond the top substrate on the front side to protect the front s...

AI Technical Summary

Problems solved by technology

This preparation process has the following problems: First, it needs to carry out two substrate bonding processes, the process is complicated and the surface quality is difficult to control

The backside light emission method is adopted, and the backside substrate material has restrictions on the laser wavelength. For example, the GaAs substrate is not suitable for using wavelengths below 940nm, which will affect the light output efficiency; secondly, the backside process requires high precision (precision less than 5um); thirdly, packaging Wire bonding is required from time to time, increasing inductance affects high-frequency transmission, and cannot be effectively controlled during mass production

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