A kind of surface metallized diamond composite particle
A technology of diamond particles and composite particles, which is applied in diamond, metal material coating technology, vacuum evaporation plating, etc., can solve the problems of difficult diamond-impregnated tools and high cost, and achieve the effect of improving holding properties and effective utilization
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Embodiment 1
[0026] With 40 / 45 mesh intensity as the diamond particle base material of D60 as the starting particle, cleaning and roughening (5wt% NaOH ultrasonic cleaning and then water washing; washing with 3wt% HCl to neutrality; adding 10wt% HNO 3Boil in medium for 10min, carry out roughening treatment, and wash to neutral), pass Ar and CH in the plasma etching reaction chamber 4 Perform plasma etching, the gas pressure of etching gas is 10Pa, the flow rate of Ar is 60sccm, CH 4 The flow rate is 12sccm; after etching, heat treatment is carried out at 700 ° C for 5 minutes; then the average particle size is 10 μm Ti alloy powder (28wt% Cu, 72wt% Ti) and the diamond particle substrate after the above-mentioned plasma etching treatment Mixed and placed in a quartz crucible, and placed in a vacuum chamber to evacuate, then heated to 750 ° C for 1 hour to deposit a layer of Ti-Cu alloy layer with a thickness of about 0.5 μm on the surface of the diamond particle substrate, and by XRD Anal...
Embodiment 2
[0028] With 40 / 45 mesh intensity as the diamond particle base material of D60 as the starting particle, cleaning and roughening (5wt% NaOH ultrasonic cleaning and then water washing; washing with 3wt% HCl to neutrality; adding 10wt% HNO 3 Boil in medium for 10min, carry out roughening treatment, and wash to neutral), pass Ar and CH in the plasma etching reaction chamber 4 Perform plasma etching, the gas pressure of etching gas is 10Pa, the flow rate of Ar is 60sccm, CH 4 The flow rate is 12sccm; heat treatment is carried out at 700° C. for 5 minutes after etching; then the average particle diameter is 10 μm Ti alloy powder (10wt% Cu, 90wt% Ti) and the diamond particle substrate after the above-mentioned plasma etching treatment Mixed and placed in a quartz crucible, and placed in a vacuum chamber to evacuate, then heated to 750 ° C for 1 hour to deposit a layer of Ti-Cu alloy layer with a thickness of about 0.5 μm on the surface of the diamond particle substrate, and by XRD ...
Embodiment 3
[0030] With 40 / 45 mesh intensity as the diamond particle base material of D60 as the starting particle, cleaning and roughening (5wt% NaOH ultrasonic cleaning and then water washing; washing with 3wt% HCl to neutrality; adding 10wt% HNO 3 Boil in medium for 10min, carry out roughening treatment, and wash to neutral), pass Ar and CH in the plasma etching reaction chamber 4 Perform plasma etching, the gas pressure of etching gas is 10Pa, the flow rate of Ar is 100sccm, CH 4 The flow rate is 20sccm; after etching, heat treatment is carried out at 750 ° C for 5 minutes; then the average particle size is 10 μm Ti alloy powder (25wt% Ni, 75wt% Ti) and the diamond particle substrate after the above-mentioned plasma etching treatment Mixed and placed in a quartz crucible, and placed in a vacuum chamber to evacuate, then heated to 750 ° C for 1 hour to deposit a layer of Ti-Ni alloy layer with a thickness of about 0.5 μm on the surface of the diamond particle substrate, and by XRD An...
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