Single-power-supply gate pole edge controllable driving circuit

Abstract

The invention discloses a single-power-supply gate pole edge controllable driving circuit. A single power supply is adopted; a bridge circuit is used for supplying power to gate poles of the power devices respectively; positive voltage and zero voltage are applied to a gate pole reference point (such as an emitting electrode of an IGBT, a source electrode of an MOSFET and the like); the control ofpositive, zero and negative voltages of the grid is realized by utilizing the voltage difference between two points, and different positive, negative and zero voltage pulse widths of the opening andclosing edges of the grid are realized by phase shift and pulse width modulation of each switching tube of the bridge circuit in driving, so that the control of the opening and closing speeds and characteristics of the power device is realized. According to the invention, a single power supply is adopted, a two-level or multi-level bridge circuit is utilized to realize level change of driving voltage, and control of the edge rate and switching characteristics of the driving gate of the power device is realized.

Description

technical field [0001] The invention relates to a controllable drive circuit for a gate edge of a single power supply, and belongs to the technical field of power electronic power switch device drive. Background technique [0002] In recent years, gate voltage-controlled power switching devices such as IGBT, MOSFET, and SiC have been widely used. The electrical characteristics of these power switching devices at the switching moment are the prerequisites for their safe operation. Improving the electrical characteristics at the switching moment can significantly improve the operational reliability of the power switching device. [0003] IGBT, MOSFET, especially some new SiC power switching devices, the switching time is extremely short, the switching rate is extremely fast, due to the parasitic capacitance and inductance in the device and circuit, the high voltage and current change rate at the time of switching, often in the power switch The voltage and current oscillations...

AI Technical Summary

Problems solved by technology

The control of the driving gate voltage edge usually adopts the methods of hierarchical driving resistance and multi-level voltage source. This kind of gate edge control method has complex gate resistance and gate driving power supply circuits, and cannot continuously control the gate edge voltage. For different Power switching devices need to change hardware circuit parameters, and the adaptability is not high

[0005] Chinese patent application number 201510222407.3 discloses an adjustable control circuit for the rising and falling edge voltage of the IGBT drive gate. The control, control and power circuit structure is complex, and the gate level cannot be continuously adjusted

Images