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Apparatus and method for programming memory cell in response to indication of memory cell age limit

A technology of memory unit and memory, applied in the field of memory

Pending Publication Date: 2020-06-26
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Given the iterative nature of programming operations and the relatively high voltage levels used for each iteration, programming operations can have a significant impact on both the speed and power consumption of the memory

Method used

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  • Apparatus and method for programming memory cell in response to indication of memory cell age limit
  • Apparatus and method for programming memory cell in response to indication of memory cell age limit

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Embodiment Construction

[0026] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown specific embodiments by way of illustration. In the drawings, like reference numerals describe substantially similar components throughout the several views. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description should not be considered in a limiting sense.

[0027] As used herein, the term "semiconductor" may refer to, for example, a layer of material, a wafer, or a substrate, and includes any underlying semiconductor structure. "Semiconductor" shall be understood to include silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin-film transistor (TFT) technology, doped and undoped semiconductors, silicon epitaxial layers supported by basic semiconductor structures, an...

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Abstract

The invention relates to an apparatus and method for programming a memory cell in response to an indication of memory cell age limit. A method of operating a memory and the memory configured to perform a similar method may include applying a first plurality of program pulses to the control gates of a plurality of memory cells during a particular program operation and applying a second plurality ofprogram pulses to the control gates of the plurality of memory cells during a subsequent program operation, wherein the first plurality of programming pulses have a specific slope, and the second plurality of programming pulses have a different slope that is less than the specific slope. A method of configuring the memory may include characterizing a read window budget of a programming operationof the memory as a function of a programming step voltages of the age limits of the plurality of memory cells.

Description

technical field [0001] The present disclosure relates generally to memory, and in particular, in one or more embodiments, to apparatus and methods for programming memory cells in response to an indication of their age. Background technique [0002] Memory (eg, a memory device) is typically provided as an internal semiconductor integrated circuit device in a computer or other electronic device. There are many different types of memory, including random access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and flash memory. [0003] Flash memory has grown into a popular source of non-volatile memory for a variety of electronic applications. Flash memory typically uses one-transistor memory cells that allow for high memory density, high reliability, and low power consumption. Changes in the threshold voltage (Vt) of a memory cell due to programming (which is often referred to as writing) or other ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3431G11C16/0483G11C11/5628G11C16/3495G11C16/349
Inventor P-C·江
Owner MICRON TECH INC
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