Semi-conductor device with longitudinal and transversal double-pole transistor

Abstract

A semiconductor device has a P type semiconductor substrate 1, a vertical type bipolar transistor having an N type base region 4, a lateral type bipolar transistor having an N type base region 4 formed on the semiconductor substrate 1, an N type collector region 7a, and an N type emitter region 8, and a P type insulating diffusion region 7b for isolating between vertical and lateral type bipolar transistors, at least one of collector and emitter regions of the lateral bipolar transistor having substantially same depth of the insulating diffusion region 7b.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, the present invention relates to a semiconductor device having a vertical type bipolar transistor and a lateral type bipolar transistor. Background technique [0002] Bipolar transistors are widely used in almost all fields of semiconductor devices operating at high speeds, as well as semiconductor integrated circuits for home electronic equipment due to their high operating speed, high driving performance, and excellent analog characteristics. [0003] There are two types of bipolar transistors, namely NPN bipolar transistors and PNP bipolar transistors. In integrated circuits, vertical NPN transistors (hereinafter referred to as "NPN transistors") are usually used, which have three doped regions. The emitter region, the base region and the collector region are sequentially formed on the semiconductor substrate along the depth direction; and the lateral PNP transistor, (he...

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Problems solved by technology

Therefore, the P+ type collector diffusion layer does not completely surround the emitter diffusion layer, which causes h FE decreases, and the substrate current increases

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