Film forming apparatus and film forming method

Abstract

A film forming apparatus includes a reaction vessel that has a film forming target member disposed therein and deposits a film having an element contained in a film forming gas as a constituent element on the film forming target member, utilizing excitation and decomposition of the film forming gas supplied thereto and that has a reaction active region where the film forming gas is capable of being excited and decomposed, and a reaction inactive region that is a region continuous with the reaction active region; a film forming gas supply device that supplies the film forming gas to the reaction inactive region within the reaction vessel; an excitation device that excites and decomposes the film forming gas in the reaction vessel; a holding device that has a holding member which holds the film forming target member, and a drive unit which drives the holding member between the reaction inactive region and the reaction active region and repeatedly moves the film forming target member andwhich supplies the film forming gas from the reaction inactive region to the reaction active region together with the movement of the film forming target member; and an exhaust member that is providedwithin the reaction vessel to exhaust a gas in the reaction vessel and that exhausts the gas in the reaction vessel that has passed through or over at least one of an interior or a side face of the film forming target member held by the holding member.

Description

technical field [0001] The present invention relates to a film forming device and a film forming method. Background technique [0002] Conventionally, there are known film forming apparatuses and film forming methods for depositing a film composed of elements contained in the film forming gas on a member to be film formed by energizing decomposition of the film forming gas supplied inside. [0003] As an example thereof, there is, for example, plasma CVD (Plasma-enhanced Chemical Vapor Deposition (plasma-enhanced chemical vapor deposition)). In plasma CVD, low temperature plasma is used to excite and decompose a film-forming gas, so that an inorganic film can be formed at a low temperature. Thereby, even if the member to be formed into a film is not a member that can withstand a high temperature of 300 degrees like a resin member, an inorganic film can be formed. [0004] For example, Patent Document 1 discloses "a thin film forming apparatus and a thin film forming method...

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Problems solved by technology

[0009] Therefore, a nearly uniform film can be formed on the surface of the film forming object that can be opposed to the reaction active region side, but it is difficult for the film forming gas to reach the inside of the film forming object (for example, the wall surface of the pores of the porous body, the The inner peripheral surface of the cylindrical member, the wall surface of the through hole of the member having the through hole, etc.) and the side surface (the surface intersecting with the surface of the film forming object member that can face the reaction active region side) or even if it reaches, the same Gas is also entrapped, so no film is formed or a near-uniform film is difficult to form

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