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gate drive circuit

A gate drive and circuit technology, applied in the field of electronics, can solve the problem of insufficient transformer group dynamic ability, and achieve the effect of improving the driving ability

Active Publication Date: 2021-07-13
SHINRY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a gate drive circuit, which can avoid the problem of insufficient group dynamic capability of the transformer due to the single winding of the primary and secondary wires in the prior art, and effectively enhance the drive capability provided by the transformer to the MOSFET gate drive circuit. Thus turning on the MOS tube

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Embodiment Construction

[0024] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. It should be understood that when used in this specification and the appended claims, the terms "comprising" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or Presence or addition of multiple other features, integers, steps, operations, elements, components and / or collections thereof. In addition, the terms "first", "second", and "third", etc. are used to distinguish different objects, and are not used to describe a specific order.

[0025] It should be noted that the terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of thi...

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Abstract

The embodiment of the present application discloses a gate drive circuit, including: a rectifier circuit, an energy supply circuit, an amplifier circuit, a resistor, a MOS tube and a transformer; the first end of the transformer is connected to the first end of the amplifier circuit and the first end of the rectifier circuit One end, the second end of the transformer is connected to the source of the MOS tube and the second end of the energy supply circuit; the second end of the rectifier circuit is connected to the first end of the energy supply circuit and the second end of the amplifier circuit; the third end of the amplifier circuit The first end of the resistor is connected to the first end of the resistor; the second end of the resistor is connected to the gate of the MOS tube; the drain of the MOS tube is connected to an external circuit; the transformer is used to generate the driving signal, and the rectifier circuit is used to control the power supply circuit to charge and amplify The circuit is used to amplify the signal output by the energy supply circuit and the driving signal generated by the transformer, and the signal output by the amplifying circuit is used to drive the MOS tube. Implementing the embodiment of the present application can effectively enhance the power provided by the transformer to the MOSFET gate drive circuit. Drive capability.

Description

technical field [0001] The present application relates to the field of electronic technology, in particular to a gate drive circuit. Background technique [0002] With the development of switching power supply and motor control technology, metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) gate drive circuit has also developed, and various MOSFETs have appeared in the market gate drive circuit. The function of the driving circuit is to control the on-off operation of the MOSFET through a low-voltage signal. [0003] see figure 1 ,Such as figure 1 As shown, there are generally two winding methods for existing transformers, one is parallel winding of the primary and secondary wires, and the other is single winding of the primary and secondary wires. When the primary and secondary wires are wound in parallel, the coupling degree is high, the leakage inductance is small, and the driving capability is large, but the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08
Inventor 张盘龙赵德琦吴壬华
Owner SHINRY TECH