Method for evaluating saturated gray value of large-area array color CMOS image sensor after irradiation based on channel separation

Abstract

The invention relates to a method for evaluating the saturated gray value of a large-area array color CMOS image sensor after irradiation based on channel separation. The device involved in the methodis composed of an electrostatic test platform, an integrating sphere light source, a three-dimensional sample adjusting table, a sample test board, a large-area array color CMOS image sensor sample,a direct-current power supply and a computer. The method comprises the steps of firstly, turning on the integrating sphere light source, turning off other lighting sources in a test chamber, then setting the integrating sphere light source as fixed light intensity, adjusting the integration time from small to large, enabling an output image to become brightest from dark, putting corresponding dataof different pixel units of the image sensor into a gray value matrix of an R, GB, GR or B channel in a classified manner according to the coordinates, respectively calculating the average gray valueof all the pixels of each channel, drawing a change curve of the average gray value of all the pixels of each channel along with the integration time, and obtaining the saturated gray value accordingto the curve. According to the invention, the operation is convenient and easy, and the degradation condition of the saturated gray value of each channel of the device due to the irradiation can be visually seen, thereby providing a theoretical basis and technical support for anti-radiation design of the large-area array color CMOS image sensor in space application.

Description

technical field [0001] The invention belongs to the technical field of photoelectric imaging device performance parameter detection, and relates to a method for evaluating the saturated output voltage of a large area array color CMOS image sensor after irradiation based on channel separation. Background technique [0002] Photoelectric imaging devices are a general term for information devices that use the photoelectric effect to convert light radiation images into observable, recording, transmitting, storing and processing information. Photoelectric imaging devices are widely used in various space optical satellites and payloads. Because they can obtain images in real time, they are indispensable core devices in space photoelectric systems such as ground remote sensing reconnaissance, target monitoring, and star sensors. Compared with charge-coupled devices, CMOS image sensors have obvious advantages such as monolithic integration, high reliability, single voltage, low powe...

AI Technical Summary

Problems solved by technology

In the past, a large number of literatures have studied the calculation method of the saturation gray value of black and white image sensors before and after irradiation, but for this large area array color image sensor, the parameter degradation degrees of the output signals of all pixels and channels after irradiation are different. , the existing method is no longer applicable, so it is necessary to separate the signals of each channel through mathematical methods according to the arrangement relationship of each channel of the pixel unit of the large area array color image sensor, and then calculate the saturation gray value of each channel, and finally compare and analyze Mechanism Explanation for Different Degradation Degrees of Different Channels

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