TOF image sensor pixel structure capable of suppressing background light
A technology of image sensor and pixel structure, applied in image communication, instruments, re-radiation of electromagnetic waves, etc., can solve the problems of increased pixel size, decreased measurement accuracy, limited sensor resolution, etc.
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[0012] The present invention will be described in detail below according to the drawings and embodiments, but the protection scope of the present invention is not limited thereto.
[0013] An embodiment of the background light suppression structure proposed by the present invention is as follows: image 3 shown. figure 2 All the switches in the circuit are realized by NMOS switches, the voltage-controlled current source is realized by the cascode structure formed by MOS transistors M1 and M2, Vb is the bias voltage of the common-gate transistor M2, and the drain current of M2 is the voltage-controlled current source The output current, the gate voltage of M1 is the control voltage of the voltage-controlled current source. The TOF light source adopts square wave continuous wave modulation, the modulation frequency is 5MHz, and the square wave duty cycle is 40%. The larger the value of the MOS capacitor C, the smaller the leakage of the capacitor, the more stable the gate vol...
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