TOF image sensor pixel structure capable of suppressing background light

A technology of image sensor and pixel structure, applied in image communication, instruments, re-radiation of electromagnetic waves, etc., can solve the problems of increased pixel size, decreased measurement accuracy, limited sensor resolution, etc.

Active Publication Date: 2020-07-07
TIANJIN UNIV MARINE TECH RES INST
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems existing in the prior art, the present invention proposes a TOF image sensor pixel structure capable of suppressing background light, which solves the problem that strong backgro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TOF image sensor pixel structure capable of suppressing background light
  • TOF image sensor pixel structure capable of suppressing background light
  • TOF image sensor pixel structure capable of suppressing background light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be described in detail below according to the drawings and embodiments, but the protection scope of the present invention is not limited thereto.

[0013] An embodiment of the background light suppression structure proposed by the present invention is as follows: image 3 shown. figure 2 All the switches in the circuit are realized by NMOS switches, the voltage-controlled current source is realized by the cascode structure formed by MOS transistors M1 and M2, Vb is the bias voltage of the common-gate transistor M2, and the drain current of M2 is the voltage-controlled current source The output current, the gate voltage of M1 is the control voltage of the voltage-controlled current source. The TOF light source adopts square wave continuous wave modulation, the modulation frequency is 5MHz, and the square wave duty cycle is 40%. The larger the value of the MOS capacitor C, the smaller the leakage of the capacitor, the more stable the gate vol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A TOF image sensor pixel structure capable of suppressing background light is composed of a photodiode PD, a transmission switch TG, a feedback switch FBG, a reset switch rst, an MOS transistor capacitor C, a voltage-controlled current source and a charge integral amplification circuit. The negative electrode of the PD is connected with the charge integral amplification circuit through a transmission switch TG, and is connected with the MOS capacitor C and the control voltage Vctr of the voltage-controlled current source through a feedback switch FBG; the output current Ibias of the voltage-controlled current source directly flows into the negative electrode of the PD; the grid electrode of the MOS tube capacitor C is connected with the ground through a reset switch rst, and the source electrode and the drain electrode are in short circuit and are directly connected to the ground; and the structure can solve the problems that strong background light enables TOF pixels to be saturated and measurement precision to be reduced, and a traditional background light suppression scheme enables the pixel size to be significantly increased and enables the resolution of the sensor to be limited.

Description

technical field [0001] The invention relates to the field of analog integrated circuit design, in particular to a TOF image sensor pixel structure capable of suppressing background light. Background technique [0002] Three-dimensional image sensors can perceive the depth information of objects, help people obtain more complex relationships in the real world, and meet the needs of applications such as industrial automation, machine vision, and attitude detection, and have broad application prospects. [0003] Compared with other 3D imaging technologies, 3D imaging technology based on Time-of-Flight (TOF) is not restricted by geometric shape and size, and does not require complicated data processing, so it can be widely used. In the TOF image sensor, the charge generated by the background light is not helpful for measuring distance information, but it occupies a large amount of full well capacity, saturating the pixels and reducing the measurement accuracy. A traditional bac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H04N13/204H04N5/369G01S17/08
CPCG01S17/08H04N25/70
Inventor 徐江涛林鹏查万斌聂凯明高志远
Owner TIANJIN UNIV MARINE TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap