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Packaging device and method based on anodic bonding

A technology for anodic bonding and packaging devices, which is applied in microstructure devices, manufacturing microstructure devices, and processes for producing decorative surface effects, and can solve problems such as affecting the vacuum degree of packaging cavities.

Pending Publication Date: 2020-07-10
北京大学(天津滨海)新一代信息技术研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention proposes a packaging device and method based on anodic bonding, aiming to solve the problem in the prior art that the vacuum degree of the packaging cavity is affected by the exposure of the electrode end to the air

Method used

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  • Packaging device and method based on anodic bonding
  • Packaging device and method based on anodic bonding
  • Packaging device and method based on anodic bonding

Examples

Experimental program
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Effect test

Embodiment 1

[0040] figure 2 , image 3 and Figure 4 Respectively show the front view structural schematic diagram, the front cross-sectional structural schematic diagram and the left view structural schematic diagram of the cross-electrode silicon glass anodic bonding packaging device in the prior art.

[0041] Such as Figure 2-4 As shown, when the prior art is packaged in the way of anodic bonding across electrodes, the end of the electrode 3 is located outside the bonding interface, so that one end of the electrode is exposed to the external atmosphere. If the end of the electrode 3 is located at the anodic bonding interface The outside, that is, the electrode 3 is exposed to the atmosphere. When the silicon wafer 1 and the glass wafer 4 are anodically bonded, there is a gap 8 between the bonding interface and the electrode 3, and the two ends of the gap 8 are respectively connected to the outside air and the package. The cavity 5 is turned on, so that outside air enters the packag...

Embodiment 2

[0057] Figure 11 A schematic diagram of the steps of the packaging method based on anodic bonding according to the embodiment of the present application is shown in .

[0058] Such as Figure 11 As shown, the packaging method based on anodic bonding provided in this embodiment includes the following steps:

[0059] S101: disposing the chip and the electrode on the silicon wafer part, and connecting the chip and the electrode;

[0060] S102: Perform anodic bonding of the silicon wafer part and the glass wafer part to package the chip and the electrode, so that one end of the electrode is arranged at the contact surface of the silicon wafer part and the glass wafer part;

[0061] S103: providing a conductive channel inside the glass sheet part, the first opening of the conductive channel is arranged at the electrode of the contact surface, and the second opening of the conductive channel is arranged on the outer surface of the glass sheet part;

[0062] S104: setting a condu...

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Abstract

The embodiment of the invention provides a packaging device and method based on anodic bonding. The packaging device based on anodic bonding comprises a glass sheet part and a silicon wafer part. Theglass sheet part and the silicon wafer part form a packaging cavity. The silicon wafer in the packaging cavity is provided with a chip, the chip is connected with one end of an electrode, and the other end of the electrode is arranged on the contact surface of the glass sheet part and the silicon wafer part. Specifically, a conductive channel is arranged in the glass sheet part, a first opening ofthe conductive channel is formed in an electrode of the contact surface, and a second opening of the conductive channel is formed in the outer surface of the glass sheet part. A conducting medium isarranged in the conducting channel, is connected with the electrode through the first opening and is connected with an external circuit through the second opening. According to the invention, the electrodes are prevented from being exposed in the atmosphere, and the problem that the vacuum degree of the packaging cavity is affected due to exposure of bonding interface gaps in the air is solved.

Description

technical field [0001] The present application belongs to the technical field of vacuum packaging, and in particular relates to a packaging device and method based on anodic bonding. Background technique [0002] Anodic bonding technology plays an important role in the fabrication, assembly and packaging of devices of Micro Electro Mechanical Systems (MEMS). Vacuum sealing and wafer-level packaging of MEMS devices can be realized. Anodic bonding is generally carried out under certain temperature, pressure and voltage conditions. During the bonding process, the silicon wafer to be bonded needs to be connected to the positive electrode of the power supply, and the glass to be connected to the negative electrode. A chemical reaction occurs to form a strong chemical bond, bringing the silicon wafer and the glass into intimate contact. Anodic bonding is mainly used in the bonding between silicon / glass, between non-silicon materials and glass materials, and between glass, metal,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00293B81C1/00269
Inventor 刘文超魏贤龙郭等柱
Owner 北京大学(天津滨海)新一代信息技术研究院