Crystalline silicon solar cell and edge passivation method thereof

Abstract

The invention provides a crystalline silicon solar cell and an edge passivation method thereof, and belongs to the technical field of photovoltaics. The method comprises the following steps of: horizontally placing sliced solar cells, neatly stacking the sliced solar cells, placing the sliced sections of the solar cells on the same plane into a slice box, placing the slice box and the solar cellsinto aluminum oxide deposition equipment together, plating a layer of aluminum oxide film on the edges of the sliced sections of the solar cells, and then placing the slice box and the solar cells into an electric injection annealing furnace for annealing. The invention provides a The method for reducing the carrier recombination rate of a the laser cutting surface of a the battery by passivatingthe surface edge of a silicon wafer with aluminum oxide and enabling an the aluminum oxide film not to cover a the main grid of the battery is provided.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and relates to a crystalline silicon solar cell and an edge passivation method thereof. Background technique [0002] In recent years, with the rise of new module technologies such as half-cut modules and shingled modules, it is necessary to divide a battery into two or more pieces when making modules. In industrial applications, there are generally two ways to divide solar cells: laser scribing plus mechanical splitting, and thermal laser low-damage splitting. The surface recombination rate of the cracked section of the battery is very high, which will have a great impact on the electrical performance of the solar battery. For example, after the PERC solar cell is divided into two by laser scribing, the efficiency of half of the cell is reduced by 0.1-0.2% abs due to the increase in edge recombination; after the contact passivation cell (TOPCon cell) is divided into two by laser scribing ...

AI Technical Summary

Problems solved by technology

Most of the existing technologies use silicon dioxide to passivate the edges of silicon wafers. For example, a Chinese patent on a method to suppress the reduction in efficiency of crystalline silicon solar cells after laser cutting in half [application number: 201811363985.9] is to put the half-cut cells into the chain Oxidation is carried out at 150-500°C in a type, box or tube heating furnace, and silicon dioxide is used to passivate the edge of the silicon wafer, but this method still needs to be improved in terms of the carrier recombination rate

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