Blue light perovskite light emitting diode and preparation method thereof
A technology of light-emitting diodes and blue light-emitting layers, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of poor conductivity of quasi-two-dimensional perovskites, coexistence of perovskite phases, and fine-tuning quasi-two-dimensional Problems such as difficulty in perovskite phase distribution, to achieve the effect of improving external quantum efficiency and improving luminous efficiency
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Embodiment 1
[0059] This embodiment provides a blue perovskite light-emitting diode doped with NaBr, which sequentially includes an anode, a hole injection layer, a hole transport layer, a blue light emitting layer, an electron transport layer, an electron injection layer and a cathode from bottom to top , the preparation method is as follows:
[0060] (1) Prepare two kinds of perovskite precursor solutions according to the concentration of each material in Table 1.
[0061] (2) Prepare a 0.4 mol / L ethanol solution of nickel acetate pentahydrate, and add 0.4 mol / L ethanolamine after the dissolution is complete to obtain a mixed solution. The mixed solution was spin-coated on ITO glass at 4000rpm for 30 seconds, and annealed at 350°C for 1 hour to obtain NiO x layer.
[0062] (3) Prepare 8 mg / mL PVK chlorobenzene solution, and add TAPC at 3 mg / mL to obtain PVK:TAPC solution. The PVK:TAPC solution was spin-coated at 4000rpm for 30 seconds on the NiO prepared in step (2). x layer, and ann...
Embodiment 2
[0074] This embodiment provides a blue-light perovskite light-emitting diode doped with NaBr and regulated by Pb composition, which sequentially includes an anode, a hole injection layer, a hole transport layer, a blue light-emitting layer, and an electron transport layer from bottom to top. , electron injection layer and cathode, the preparation method is as follows:
[0075] (1) Prepare two kinds of perovskite precursor solutions according to the concentration of each material in Table 3.
[0076] (2) Prepare a 0.4 mol / L ethanol solution of nickel acetate pentahydrate, and add 0.4 mol / L ethanolamine after the dissolution is complete to obtain a mixed solution. The mixed solution was spin-coated on ITO glass at 4000rpm for 30 seconds, and annealed at 350°C for 1 hour to obtain NiO x layer.
[0077] (3) Prepare 8 mg / mL PVK chlorobenzene solution, and add TAPC at 3 mg / mL to obtain PVK:TAPC solution. The PVK:TAPC solution was spin-coated at 4000rpm for 30 seconds on the NiO p...
Embodiment 3
[0089] This embodiment provides a blue-light perovskite light-emitting diode doped with NaBr and regulated by Pb composition, which sequentially includes an anode, a hole injection layer, a hole transport layer, a blue light-emitting layer, and an electron transport layer from bottom to top. , electron injection layer and cathode, the preparation method is as follows
[0090] (1) Prepare the perovskite precursor solution according to the concentration of each material in Table 5.
[0091] (2) Prepare a 0.4 mol / L ethanol solution of nickel acetate pentahydrate, and add 0.4 mol / L ethanolamine after the dissolution is complete to obtain a mixed solution. The mixed solution was spin-coated on ITO glass at 4000rpm for 30 seconds, and annealed at 350°C for 1 hour to obtain NiO x layer.
[0092] (3) Prepare three different hole transport layers, respectively:
[0093] a) Prepare 8mg / mL PVK chlorobenzene solution and spin coat NiO prepared in step (2) for 30 seconds at 4000rpm x l...
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