Manufacturing method of double-layer silicon-based filter based on three-dimensional inductor
A manufacturing method and filter technology, which is applied in the direction of semiconductor devices, waveguide devices, electric solid devices, etc., can solve the problems of large size and low integration density of filters, and achieve the effect of improving production efficiency and realizing batch production
Active Publication Date: 2020-07-24
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0003] In view of this, the embodiment of the present invention provides a method for manufacturing a double-layer silicon-based filter based on a three-dimensional inductor, so as to solve the problem in the prior art that the integration density of the filter is not high, resulting in a slightly larger size
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[0048] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
[0049] In order to illustrate the technical solutions of the present invention, specific examples are used below to illustrate.
[0050] figure 1 The implementation flow diagram of the manufacturing method of the double-layer silicon-based filter based on the three-dimensional inductance provided by the embodiment of the present invention is described in detail as follows.
[0051] Step 101 , ma...
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The invention is applicable to the technical field of filter manufacturing and provides a manufacturing method of a double-layer silicon-based filter based on a three-dimensional inductor. The methodcomprises the following steps: manufacturing a circuit structure corresponding to the three-dimensional inductor on an upper silicon wafer; manufacturing a plurality of capacitors on a lower silicon wafer, manufacturing an air bridge structure at a crossed position of transmission lines, and manufacturing the circuit structure corresponding to the three-dimensional inductor on a metal layer corresponding to the three-dimensional inductor; and aligning and bonding the circuit structures corresponding to the three-dimensional inductors in the upper silicon wafer and the lower silicon wafer to acquire a double-layer silicon-based filter. Therefore, the double-layer silicon-based filter based on the three-dimensional inductor which is small in size can be acquired, manual intervention is not needed in a process of manufacturing the double-layer silicon-based filter based on the three-dimensional inductor, batch production can be achieved, and production efficiency is improved.
Description
technical field [0001] The invention belongs to the technical field of filter production, and in particular relates to a production method of a double-layer silicon-based filter based on a three-dimensional inductance. Background technique [0002] As an important component in the millimeter wave communication system, the filter has become an important research direction for miniaturization. The size of the microwave filter should be reduced as much as possible, and it can be connected and integrated with other modules as conveniently and flexibly as possible, so as to promote the integration of the microwave system as a whole. miniaturization and portability. However, the size of existing filters is on the order of centimeters, and the integration density is not high, resulting in a slightly larger size. Contents of the invention [0003] In view of this, an embodiment of the present invention provides a method for manufacturing a double-layer silicon-based filter based ...
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IPC IPC(8): H01P1/20H01L23/64
CPCH01L23/645H01P1/20
Inventor 董春辉杨志商庆杰丁现朋张晓磊王敬轩李丰钱丽勋李海剑李宏军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP