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Single crystal film bulk acoustic resonator filter optimized by radio frequency inductance and preparation method thereof

A bulk acoustic wave resonator and single crystal thin film technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of large insertion loss and poor out-of-band suppression, and achieve the effect of reducing performance loss and enhancing out-of-band suppression characteristics

Pending Publication Date: 2020-07-24
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The mainstream FBAR filter preparation method is to connect multiple FBAR resonators in series and parallel to form a topology structure, but this method has problems such as large insertion loss and poor out-of-band rejection when preparing high-frequency filter devices, especially above 5 GHz.

Method used

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  • Single crystal film bulk acoustic resonator filter optimized by radio frequency inductance and preparation method thereof
  • Single crystal film bulk acoustic resonator filter optimized by radio frequency inductance and preparation method thereof
  • Single crystal film bulk acoustic resonator filter optimized by radio frequency inductance and preparation method thereof

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Embodiment 1

[0051] This embodiment provides a single crystal thin film bulk acoustic resonator filter optimized by using radio frequency inductors, such as Figure 6 As shown, the resonator includes an epitaxial substrate 101, a bottom electrode 102, a piezoelectric film 103, a top electrode 104, a protective layer 105, an electrical connection via hole 106, an electrode connection microstrip line 107, The radio frequency inductor planar metal wire segment 108, wherein the top electrode 104, the piezoelectric film 103, and the bottom electrode 102 together form a sandwich structure.

[0052] The transfer substrate 101 is single crystal Si; the protective layer 105 is SiO 2 ; The piezoelectric film 103 is AlN with a thickness of 2 μm; both the bottom electrode and the top electrode are metal electrode layers, the thickness of the electrode layer is 40nm, and the electrode metal is Mo.

[0053] The thickness of the protective layer is 2.3um; the pitch of the plane spiral inductor metal lin...

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Abstract

The invention discloses a single crystal film bulk acoustic resonator filter optimized by radio frequency inductance and a preparation method thereof. The filter comprises an epitaxial substrate, a bottom electrode, a piezoelectric film, a top electrode, a protective layer, an electrical connection through hole, an electrode connection microstrip line and a radio frequency inductance plane metal line segment. The filter comprises a resonator unit with a sandwich structure and a radio frequency inductance part. The resonator unit is a silicon back etching type FBAR resonator, a single crystal AlN piezoelectric layer is adopted as an acoustic oscillation layer, and the FBAR filter obtained through the preparation method effectively improves out-of-band rejection, reduces in-band ripples, simplifies the preparation process of the FBAR filter, reduces the preparation cost of a device and improves the product performance.

Description

technical field [0001] The invention relates to the technical field of thin film bulk acoustic wave resonators and the field of MEMS micromachining, in particular to a single crystal thin film bulk acoustic wave resonator filter optimized by using radio frequency inductance and a preparation method thereof. Background technique [0002] With the popularization and development of 5G technology, the communication field is ushering in another period of rapid growth. Corresponding technology upgrades and device replacements have also followed. Following the mainstream SAW surface acoustic wave devices in the 4G era, BAW bulk acoustic wave devices have gradually come into people's attention. As a key component of radio frequency signal front-end processing, FBAR is called thin film bulk acoustic wave device, which is currently the most widely used and most promising member of BAW devices. FBAR bulk acoustic wave filter has the advantages of high applicable frequency, high quali...

Claims

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Application Information

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IPC IPC(8): H03H9/17H03H3/02
CPCH03H3/02H03H9/17
Inventor 李国强张铁林刘红斌衣新燕刘鑫尧赵利帅
Owner SOUTH CHINA UNIV OF TECH