Method and system for extracting stray capacitance of igbt dynamic parameter test circuit

A technology for testing circuits and dynamic parameters. It is applied in the direction of measuring resistance/reactance/impedance, measuring electricity, and capacitance measurement. It can solve problems such as current distortion, inability to obtain stray capacitance in the IGBT test circuit, and affecting device parameter test results.

Active Publication Date: 2022-07-22
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a method and system for extracting stray capacitance of an IGBT dynamic parameter test circuit, which solves the current distortion caused by the rapid change of the voltage during the IGBT turn-on transient process in the prior art, but cannot obtain The stray capacitance in the test circuit of the IGBT dynamic parameter test platform affects the test results of the device parameters

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  • Method and system for extracting stray capacitance of igbt dynamic parameter test circuit
  • Method and system for extracting stray capacitance of igbt dynamic parameter test circuit
  • Method and system for extracting stray capacitance of igbt dynamic parameter test circuit

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Embodiment 1

[0044] The embodiment of the present invention provides a method for extracting stray capacitance of an IGBT dynamic parameter test circuit, wherein the IGBT dynamic parameter test circuit is used to connect an IGBT device to test the IGBT device, such as figure 1 As shown, the method for extracting the stray capacitance of the IGBT dynamic parameter test circuit according to the embodiment of the present invention includes the following steps:

[0045] Step S1: Measure the measured voltage of the emitter and the measured current of the collector during the transient turn-on process of the IGBT device, and obtain the voltage change curve of the measured voltage of the emitter during the transient turn-on process and the measured current of the collector during the transient turn-on process. Current variation curve.

[0046] In the embodiment of the present invention, an IGBT dynamic parameter test platform is built based on the double-pulse test method, and the test circuit sc...

Embodiment 2

[0091] The embodiment of the present invention provides an IGBT dynamic parameter test circuit stray capacitance extraction system, such as Figure 5 shown, including:

[0092] The acquisition module 1 is used to measure the measured voltage of the emitter and the measured current of the collector during the transient turn-on process of the IGBT device, and obtain the voltage change curve of the measured voltage of the emitter during the transient turn-on process and the measured current of the collector during the transient turn-on. The current change curve in the process; this module executes the method described in step S1 in Embodiment 1, and details are not repeated here.

[0093] The first calculation module 2 is used to calculate the voltage difference between the actual measured voltage of the emitter at the end moment of the transient turn-on process and the start moment by using the voltage change curve; this module executes the method described in step S2 in Embodim...

Embodiment 3

[0098] Embodiments of the present invention provide an electronic device, such as Image 6 As shown, it includes: at least one processor 401 , such as a CPU (Central Processing Unit, central processing unit), at least one communication interface 403 , memory 404 , and at least one communication bus 402 . Among them, the communication bus 402 is used to realize the connection and communication between these components. The communication interface 403 may include a display screen (Display) and a keyboard (Keyboard), and the optional communication interface 403 may also include a standard wired interface and a wireless interface. The memory 404 may be a high-speed RAM memory (Ramdom Access Memory, volatile random access memory), or may be a non-volatile memory (non-volatile memory), such as at least one disk memory. The memory 404 can optionally also be at least one storage device located away from the aforementioned processor 401 . The processor 401 may execute the method for ...

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Abstract

The invention discloses a method and a system for extracting stray capacitance of an IGBT dynamic parameter testing circuit. The voltage change curve in the process and the current change curve of the collector measured current during the transient turn-on process; the voltage change curve is used to calculate the voltage difference between the end time and the start time of the emitter measured voltage during the transient turn-on process; the current change curve is used Calculate the power difference between the ideal power and the measured power of the collector during the transient turn-on process; divide the power difference by the voltage difference to obtain the stray capacitance of the IGBT dynamic parameter test circuit. Based on the turn-on transient waveform of the IGBT device, the invention calculates the stray capacitance of the dynamic test platform by the method of actual measurement, can effectively evaluate the accuracy of the measurement results of the dynamic test equipment, and provides a basis for formulating the standard of the stray capacitance of the equipment.

Description

technical field [0001] The invention relates to the technical field of device testing, in particular to a method and system for extracting stray capacitance of an IGBT dynamic parameter testing circuit. Background technique [0002] Combining the advantages of MOS devices and bipolar transistor devices, IGBTs have become mainstream devices in the field of power electronics and are widely used in communications, transportation, industry, and power transmission. Through the welding type, it has developed to ultra-low parasitic inductance packaging, intelligent power modules and ultra-high-power crimping packaging structures. [0003] IGBT dynamic parameters are the basic parameters that characterize the switching characteristics of IGBTs, and are the basis for device application design. In order to measure the dynamic parameters of IGBT devices, it is necessary to build a corresponding dynamic performance test platform. Due to the existence of stray capacitance in the test lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R27/26
CPCG01R31/2608G01R31/2617G01R27/2605
Inventor 唐新灵滕乐天吴军民韩荣刚石浩金锐张喆林仲康王亮
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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