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Trench type SiC IGBT structure and preparation method thereof

A trench type and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor electrical conductivity and performance, and achieve the effects of improving lifespan, improving conduction performance, and increasing surface area

Pending Publication Date: 2020-08-04
CHONGQING WATTSCI ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Another object of the present invention is to propose a method for manufacturing trench-type SiC IGBTs, utilizing the known existence of free carbon elements at the interface between silicon carbide and its oxides, and the fact that free carbon elements can diffuse to silicon carbide materials at high temperatures characteristics, solve the problem of poor electrical conductivity of silicon carbide IGBT in the prior art, improve the yield of free carbon atoms and the conduction performance of silicon carbide IGBT

Method used

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  • Trench type SiC IGBT structure and preparation method thereof
  • Trench type SiC IGBT structure and preparation method thereof
  • Trench type SiC IGBT structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A structure of a trench silicon carbide IGBT, comprising:

[0056] N+ type SiC substrate 1;

[0057] A P-type SiC drift layer 3 disposed on the upper part of the N+ type SiC substrate 1, and a P-type SiC buffer layer 2 is provided between the N-type substrate 1 and the P-type SiC drift layer 3;

[0058] An N-type doped region 4 disposed on the upper surface of the P-type SiC drift layer 3;

[0059]A P-type doped region 5 disposed on a local upper surface of the N-type doped region 4;

[0060] A trench 6 disposed on the upper surface of the P-type SiC drift layer 3 and penetrating the N-type doped region 4, and the depth of the trench 6 is greater than the depth of the N-type doped region 4;

[0061] The inner wall of the trench 6 is provided with a second oxide layer 11, and the upper part of the trench is provided with a first oxide layer 8;

[0062] A gate 7 covered by the first oxide layer 8 and the second oxide layer 11 is arranged in the trench 6, and the upper ...

Embodiment 2

[0080] A structure of a trench silicon carbide IGBT, comprising:

[0081] N+ type SiC substrate 1;

[0082] A P-type SiC drift layer 3 disposed on the upper part of the N+ type SiC substrate 1, and a P-type SiC buffer layer 2 is provided between the N+ type SiC substrate 1 and the P-type SiC drift layer 3;

[0083] An N-type doped region 4 disposed on the upper surface of the P-type drift layer 3;

[0084] The P-type doped region 5 arranged on the upper part of the N-type doped region 4; the trench 6 arranged on the upper surface of the P-type SiC drift layer 3 and running through the N-type doped region 4, and the depth of the trench 6 is greater than that of the N-type doped region. The depth of the miscellaneous area 4;

[0085] The inner wall of the trench 6 is provided with a second oxide layer 11, and the upper part of the trench is provided with a first oxide layer 8;

[0086] A gate 7 covered by the first oxide layer 8 and the second oxide layer 11 is arranged in th...

Embodiment 3

[0105] A structure of a trench silicon carbide IGBT, comprising:

[0106] P+ type SiC substrate 1;

[0107] An N-type SiC drift layer 3 disposed on the top of the P+ type SiC substrate 1, and an N-type SiC buffer layer 2 is arranged between the P-type substrate 1 and the N-type SiC drift layer 3;

[0108] A P-type doped region 4 disposed on the upper surface of the N-type SiC drift layer 3;

[0109] An N-type doped region 5 disposed on a partial upper surface of the P-type doped region 4;

[0110] A trench 6 disposed on the upper surface of the N-type SiC drift layer 3 and penetrating the P-type doped region 4, and the depth of the trench 6 is greater than the depth of the P-type doped region 4;

[0111] The inner wall of the trench 6 is provided with a second oxide layer 11, and the upper part of the trench is provided with a first oxide layer 8;

[0112] A gate 7 covered by the first oxide layer 8 and the second oxide layer 11 is arranged in the trench 6, and the upper su...

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Abstract

The invention relates to a trench type silicon carbide IGBT structure, and provides two forms on the basis of a common IGBT. In one structure, a second conductive type doped region is surrounded by afirst conductive type doped region from three sides, and an upper surface of the first conductive type doped region is flush with an upper surface of the second conductive type doped region; in another structure, the second conductive type doped region is also surrounded by a source metal from three sides, and an upper surface of the first conductive type doped region is flush with or lower than alower surface of the second conductive type doped region. According to the invention, a groove is etched in the epitaxial layer, the surface area of oxidation is increased, the output of free carbonelements is improved, annealing after oxidation promotes the carbon elements to diffuse into a drift region such that vacancies formed by carbon atom deficiency are filled up, the service life of unbalanced carriers is prolonged, the conductivity of a material is improved, and the conductivity of a silicon carbide IGBT is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a trench type SiC IGBT structure and a preparation method. Background technique [0002] With the rapid development of power electronics technology, the demand for high-power semiconductor devices is becoming more and more significant. However, due to the limitation of materials, the characteristics of traditional silicon devices have reached its theoretical limit. Silicon carbide is a wide bandgap semiconductor material that has been developed rapidly in the past ten years. It has wide bandgap, high thermal conductivity, and high carrier saturation. The advantages of mobility and high power density can be applied to high power, high temperature and radiation resistance applications. The process of silicon carbide crystal and epitaxial materials has made some progress in recent years. In the field of power electronic devices, silicon carbide IGBT is widely used in the hig...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/16H01L21/40
CPCH01L29/66348H01L29/7397H01L29/1608
Inventor 何钧刘敏
Owner CHONGQING WATTSCI ELECTRONICS TECH CO LTD
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