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Composite substrate and manufacturing method thereof

A manufacturing method, a composite technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, post-processing details, etc., which can solve problems such as surface roughness, high stitch thickness, and low surface mobility of aluminum atoms

Active Publication Date: 2022-01-04
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At this time, if the aluminum nitride layer is used as the buffer layer, due to the high activity of the aluminum atoms and the low surface mobility (surface mobility), the dislocation density of the aluminum nitride layer is high, the seam thickness is high, and the surface is rough or tortoise. Crack and other issues

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  • Composite substrate and manufacturing method thereof
  • Composite substrate and manufacturing method thereof
  • Composite substrate and manufacturing method thereof

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Embodiment Construction

[0027] Figure 1A and Figure 2 to Figure 5 It is a schematic cross-sectional view of the manufacturing process of the composite substrate according to an embodiment of the present invention, and Figure 1B for Figure 1A A schematic top view of the substrate in . The manufacturing method of the composite substrate in this embodiment includes the following steps. First, refer to Figure 1A and Figure 1B , prepare a substrate 110, the upper surface 112 of the substrate 110 includes a plurality of nano-patterned depressions 114, and these nano-patterned depressions 114 are separated from each other. In this embodiment, the substrate 110 is, for example, a sapphire substrate, and the depth H of these nano-patterned recesses 114 falls within the range of 150 nanometers to 1.5 microns, preferably 100 nanometers to 1 micron, more preferably 200 nanometers to 500 nanometers. Nano. And the width W of the nano-patterned depressions falls within the range of 200 nm to 1.5 μm, prefe...

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Abstract

The invention discloses a composite substrate and a manufacturing method thereof, wherein the composite substrate includes a substrate and an aluminum nitride layer. The upper surface of the substrate includes a plurality of nanopatterned recesses separated from each other. An aluminum nitride layer is disposed on the upper surface of the substrate, wherein the film thickness of the aluminum nitride layer is less than 3.5 microns, and the defect density of the aluminum nitride layer is less than or equal to 5×10 9 / cm 2 .

Description

technical field [0001] The invention relates to a substrate, and in particular to a composite substrate. Background technique [0002] In the epitaxial manufacturing process of light-emitting diodes, if it is desired to grow semiconductor layers such as N-type and P-type III-V semiconductor layers and quantum well layers on the substrate, it is necessary to solve the problems between the substrate (such as a sapphire substrate) and the above-mentioned semiconductor layers. There is a problem of differences in lattice constants. The difference in lattice constant will lead to epitaxial defects, which in turn affects the luminous efficiency of LEDs. In order to solve the above-mentioned problem of lattice constant difference, generally before growing the above-mentioned semiconductor layer, a buffer layer with small lattice constant difference is formed first. [0003] On the other hand, in order to improve the quantum efficiency of the light-emitting diode, a patterned sapp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/0075H01L33/0066C23C16/303C23C16/56H01L21/02458H01L21/0254H01L21/0242H01L21/0243C30B29/403C30B25/186C30B25/183C30B33/02H01L33/0062C30B25/02
Inventor 黄嘉彦
Owner IND TECH RES INST