Preparation method of a glass-based suspended ridge silicon waveguide
A silicon waveguide and glass-based technology, which is applied in the fields of optical communication and optical sensing, can solve the problems of high material cost and insufficient stability of the suspended silicon waveguide structure.
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[0044] The present invention provides a method for preparing a glass-based suspended ridge-shaped silicon waveguide, comprising the following steps:
[0045] Step 1, preparing a glass substrate 120 with a channel;
[0046] Step 2, forming a silicon device layer on the glass substrate through an anodic bonding process;
[0047] Step 3, preparing the ridge-shaped silicon waveguide core layer 110 that meets the single-mode transmission conditions by photolithography and etching;
[0048] like figure 1 As shown, the glass-based suspended ridge-shaped silicon waveguide prepared by the preparation method provided by the present invention comprises a suspended ridge-shaped silicon waveguide core layer 1, a channel under the ridge-shaped waveguide 2 and a glass substrate 3, wherein the channel under the ridge-shaped waveguide is 2 is arranged on a glass substrate 3, as the substrate of the suspended ridge-shaped silicon waveguide, which is made of glass with conductive ions that can...
Embodiment 1
[0051] Among them, the material of the glass part is borosilicate glass;
[0052] like Figures 5a-5e As shown, the preparation method of the glass-based suspended ridge-shaped silicon waveguide provided in this embodiment includes the following steps:
[0053] first step( Figure 5a ), the channel was engraved on a 500μm thick 4-inch Pyrex7740 glass wafer by the LPKF U3 laser. The route of the engraved channel was consistent with the route of the ridge waveguide. The depth of the channel was 10μm and the width was 20μm. The glass substrate 120;
[0054] The second step ( Figure 5b), the 500 μm thick 4-inch monocrystalline silicon wafer 112 is opposite to the cleaned glass substrate 120 with the channel engraved on it, and the glass substrate 120 and the silicon wafer 112 are anodic bonded by an EVG 501 anodic bonder , the bonding conditions are 400℃, 800V, vacuum environment;
[0055] third step( Figure 5c ), put the bonded wafer into the grinding machine, carry out C...
Embodiment 2
[0061] This embodiment provides a glass-based suspended ridge-shaped silicon waveguide, the structure of which is the same as that of Embodiment 1, except that the silicon device layer 114 is prepared from an SOI wafer.
[0062] like Figures 6a-6e As shown, the preparation method of the glass-based suspended ridge-shaped silicon waveguide provided in this embodiment includes the following steps:
[0063] first step( Figure 6a ), a 500 μm thick 4-inch Pyrex7740 glass wafer with a mask layer was wet-etched with a 49% HF solution and the mask layer was removed to obtain a channel consistent with the ridge silicon waveguide line, and the depth of the channel was 10μm, width is 20μm.
[0064] The second step ( Figure 6b ), the SOI wafer silicon device layer 114 is opposite to the cleaned glass substrate 120 with the channel engraved on it, the SOI oxide layer 115 has a thickness of 300 nm, and the glass wafer and the silicon wafer are bonded by an EVG 501 anodic bonder. Carr...
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Abstract
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