Hydrogen generator for an ion implanter
An ion implantation system and generator technology, applied in electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc., to solve problems such as harmful arcs
Pending Publication Date: 2020-08-14
AXCELIS TECHNOLOGIES
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Problems solved by technology
However, the etching process produces insulating materials such as AlF X , AlN, Al 2 o 3 etc.), the insulating material is emitted from the arc chamber along with the intended aluminum ions, causing the insulating material to create a harmful arc between the various components of the ion implantation system
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[0019] The present invention is generally directed to an ion implantation system and associated gas source for generating hydrogen. More specifically, the present invention is directed to a hydrogen generating assembly for generating hydrogen for the ion implantation system. The present invention positions a hydrogen generator in a gas box associated with the ion source such that the gas box maintains an elevated voltage. Accordingly, the airtightness and safety aspects of the gas box enclosure are advantageously improved over duplicated hardware and gas delivery piping.
[0020] Accordingly, the invention will now be elucidated with reference to the drawings, wherein like reference numerals refer to like elements throughout. It should be understood that the description of these aspects is for illustration only and is not to be construed in a limiting sense. In the following, for purposes of explanation, several specific details are set forth in order to provide a thorough u...
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A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing (154) for supporting an ion source (108) configured to form an ion beam. A gas box (146) within the terminal housing has a hydrogen generator (144) configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs (156) electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing (148) electrically couples the gas box and ion source.
Description
[0001] priority document [0002] This application claims the rights and interests of the U.S. non-provisional application with the application date of January 22, 2018, titled "HYDROGEN GENERATOR FOR AN IONIMPLANTER (hydrogen generator for ion implanter)" and application number US 62 / 620,144, which The entire contents are incorporated herein by reference. technical field [0003] The present invention relates generally to ion implantation systems, and more particularly to an ion implantation system having a hydrogen generator for use in an ion source of the ion implantation system. Background technique [0004] In the manufacture of semiconductor devices, semiconductors are doped with impurities using ion implantation. Ion implantation systems are commonly used to dope ions from an ion beam into workpieces implanted into semiconductor wafers to create n-type or p-type material doping or to form passivation layers during the fabrication of integrated circuits. Such beam t...
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IPC IPC(8): H01J37/317H01J37/08
CPCH01J2237/006H01J2237/0213H01J2237/022H01J37/08H01J37/3171H01J2237/0807H01L21/265
Inventor 尼尔·科尔文哲-简·谢理查德·雷舒特温迪·科尔比
Owner AXCELIS TECHNOLOGIES