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A method for polishing the end face of a wafer without a cleavage plane

A technology of cleavage surface and end surface, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc. It can solve the problems of difficult polishing of the end surface of wafers without cleavage surfaces, and achieve the goals of improving grinding efficiency, reducing shedding, and shortening time Effect

Active Publication Date: 2021-12-14
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the end face of a wafer without a cleavage face is difficult to polish, the application provides a method for polishing the end face of a wafer without a cleavage face. The method uses sandpaper to grind the end face of a wafer without a cleavage face, and then grinds the end face of the wafer Polishing treatment, using the method provided by this application, the roughness of the polished wafer end surface can be less than 3nm

Method used

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  • A method for polishing the end face of a wafer without a cleavage plane
  • A method for polishing the end face of a wafer without a cleavage plane
  • A method for polishing the end face of a wafer without a cleavage plane

Examples

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Embodiment 1

[0098] 1. Bonding the non-cleavage-surface wafer to be polished with a companion sheet through rosin, the companion sheet completely covers the non-cleavage-surface wafer to be polished, and then clamping the end surface to be polished in a fixture, and, The surface to be polished extends out of the clamp, and is ground with water sandpaper with a particle diameter of 10 μm, and the grinding time is 15 minutes; the removal amount of the wafer is 0.3 mm smaller than the target removal amount, and the speed of the grinding machine is 25 rpm. The deionized water is 10 seconds / drop; after grinding, clean the sample, loading plate, and grinding plate with deionized water, and dry them with nitrogen gas.

[0099] 2. Grind the product obtained in step 1 with fine sandpaper with a particle diameter of 1 μm, and the grinding time is 10 minutes;

[0100] 3. Place the product obtained in step 2 on the polishing carrier plate, the polishing liquid is a 1.2 μm high-efficiency diamond spray...

Embodiment 2

[0106] 1. Bonding the non-cleavage-surface wafer to be polished with a companion sheet through rosin, the companion sheet completely covers the non-cleavage-surface wafer to be polished, and then clamping the end surface to be polished in a fixture, and, The surface to be polished extends out of the clamp, and is ground with water sandpaper with a particle diameter of 20 μm, and the grinding time is 45 minutes; the removal amount of the wafer is 0.5 mm smaller than the target removal amount, and the speed of the grinding machine is 80 rpm. Ionized water is 5 seconds / drop;

[0107] After grinding, clean the sample, loading disc and grinding disc with deionized water, and dry them with nitrogen gas.

[0108] 2. Grind the product obtained in step 1 with fine sandpaper with a particle diameter of 8 μm, and the grinding time is 30 minutes;

[0109] 3. Place the product obtained in step 2 on the polishing carrier plate, the polishing liquid is 1.8UM high-efficiency diamond spray po...

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Abstract

The present application discloses a method for polishing the end face of a wafer without a cleavage face. The method uses two-step grinding combined with two-step polishing to polish the end face of a wafer without a cleavage face, wherein the two-step grinding includes rough grinding and fine grinding , the two-step grinding uses sandpaper as the abrasive, that is, the method provided by the application can control the grinding direction and the grinding degree, avoiding the embedding of the abrasive particles into the end surface to be ground or causing scratches to the end surface to be ground, and the application sets before the fine polishing step The rough polishing step thus forms two-step polishing, which can improve the polishing efficiency, shorten the time of fine polishing by 33% or even more than 50%, and improve the polishing efficiency, and the roughness of the end surface of the obtained wafer without cleavage plane is less than 3nm, which can meet the requirements of subsequent use needs.

Description

technical field [0001] The application belongs to the field of semiconductor material processing, in particular to a method for polishing the end face of a wafer without a cleavage face. Background technique [0002] Wafers without cleavage surfaces, such as wafers made of sapphire, lithium niobate, and lithium tantalate, etc., the cut surface formed after being cut, that is, the roughness of the end face of the wafer is usually large, and further processing is required The mirror surface with less roughness can be further used, otherwise the performance of the device manufactured based on the wafer will be reduced. [0003] There is no special polishing method for the end faces of wafers without cleavage planes. Usually, the method of polishing wafer planes is used to polish the end faces of wafers without cleavage planes. The polishing steps generally include: (1) Grinding: a suspension made of emery and deionized water Liquid as a grinding liquid, grinding for about 1 ho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00H01L21/304H01L21/463
CPCB24B1/00H01L21/304H01L21/463
Inventor 王金翠朱厚彬胡卉张秀全李真宇
Owner JINAN JINGZHENG ELECTRONICS