Preparation method and wafer growth raw material
A raw material, silicon carbide wafer technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of easy inclusion of carbon powder, low crystal growth rate, etc., to improve productivity, good product quality, improve product quality quality effect
Active Publication Date: 2020-08-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
However, when using the existing silicon carbide raw materials to grow single crystals, the growth rate of the crystals is usually low, and the crystals are very easy to contain particulate impurities such as carbon powder
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[0029] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0030] The inventors of the present invention found after research that among the various parameters of the silicon carbide raw material, the parameter of particle size is particularly important. The particle size of silicon carbide raw materials has a great influence on the gas phase composition during the growth process. The particle size of raw materials used for silicon carbide crystal growth is usually tens of microns to hundreds of microns. Small particle size raw material particles account for a large proportion, while small particle size When the number of raw material particles is large, it will not only reduce the crystal growth rate, but also easily l...
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Abstract
The invention provides a preparation method of a silicon carbide wafer growth raw material, which comprises the following steps: providing initial raw materials which comprise carbon powder, silicon powder and silicon carbide powder; and heating the initial raw materials to obtain the silicon carbide wafer growth raw material. According to the invention, the initial raw materials of the silicon carbide wafer growth raw material comprise the silicon carbide powder, and the silicon carbide powder can accelerate the reaction rate of carbon and silicon and improve the particle growth rate of the silicon carbide wafer growth raw material, so that the particle volume of the growth raw material is increased, and the yield of the silicon carbide wafer growth raw material is improved. The inventionalso provides the silicon carbide wafer growth raw material.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for preparing a silicon carbide wafer growth raw material and a silicon carbide wafer growth raw material. Background technique [0002] As a representative material of the third-generation semiconductor, silicon carbide (SiC) single crystal material is widely used in electric vehicles ( xEV), rail transportation (Rail), motor driving (Motor driving) and other fields. [0003] Silicon carbide single crystal materials are usually grown by physical vapor transport (PVT, Physical Vapor Transportprocess) method, and silicon carbide raw materials are used as raw materials for growing single crystals. The parameters of silicon carbide raw materials play an important role in the growth of semiconductor single crystals. , which directly affects the crystalline quality and electrical properties of single crystals. However, when using the existing silicon carbide raw mate...
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IPC IPC(8): C30B35/00C30B29/36C01B32/984
CPCC30B35/007C30B29/36C01B32/984
Inventor 焦芳
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD