PIN photosensitive device, manufacturing method thereof and display panel

Abstract

The invention provides a PIN photosensitive device. A P-type semiconductor layer in a conventional PIN photoelectric diode is replaced by a P-type semiconductor layer having a valence band energy level between an intrinsic semiconductor layer and a valence band energy level of an upper electrode, such as molybdenum oxide. Therefore, the PIN photoelectric diode can be prepared without using boranegas; in addition, the valence band energy level difference between the P-type semiconductor layer and the intrinsic semiconductor layer is used for transporting the electron holes in the valence band,so that an active layer in the thin film transistor does not need to be used, the PIN photosensitive device can be stacked on the thin film transistor, and the loss of the aperture opening ratio of the display panel is reduced.

Description

technical field [0001] The invention relates to the field of photosensitive technology, in particular to a PIN photosensitive device that reduces the loss of the aperture ratio of a display panel and does not require the introduction of borane gas, a manufacturing method thereof, and a display panel. Background technique [0002] Fingerprint recognition technology has been widely used in small and medium-sized panels, especially the under-screen optical fingerprint recognition technology has the advantages of low cost and relatively simple structure, and major manufacturers are actively developing it. However, the under-screen optical fingerprint recognition module includes multiple PIN photosensitive devices. At present, the N-type semiconductor layer and P-type semiconductor layer can only be processed by ion distribution and high-temperature processes such as excimer laser annealing and rapid thermal annealing. However, this method usually uses the active layer of the thi...

AI Technical Summary

Problems solved by technology

However, the under-screen optical fingerprint recognition module includes multiple PIN photosensitive devices. At present, the N-type semiconductor layer and P-type semiconductor layer can only be processed by ion distribution and high-temperature processes such as excimer laser annealing and rapid thermal annealing. However, this method usually uses the active layer of the thin film transistor in the display area, so that the multiple PIN photosensitive devices cannot be stacked on the thin film transistor, resulting in a loss of the aperture ratio of the display panel

Moreover, when making the P-type semiconductor layer, problems such as modifying the machine and adding borane gas pipelines and chambers will also be involved.

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