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Bias voltage induced collinear antiferromagnetic material spin polarization current generation and regulation and control method

A spin-polarized, antiferromagnetic technology, applied in the field of antiferromagnetism, can solve the problems of lack of macroscopic magnetism, restricting the research and application of antiferromagnetic materials, unable to generate spin-polarized current, etc., to promote application, Great promotional effect

Active Publication Date: 2020-09-01
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the symmetry of the magnetic sublattice of antiferromagnetic materials, it does not have macroscopic magnetism and cannot generate spin-polarized currents, which limits the research and application of antiferromagnetic materials.

Method used

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  • Bias voltage induced collinear antiferromagnetic material spin polarization current generation and regulation and control method
  • Bias voltage induced collinear antiferromagnetic material spin polarization current generation and regulation and control method
  • Bias voltage induced collinear antiferromagnetic material spin polarization current generation and regulation and control method

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Embodiment 1

[0037] Bias induced collinear antiferromagnetic material to generate spin polarized current and its regulation method, comprising the following steps:

[0038] Research on bias application direction of collinear antiferromagnetic materials:

[0039] The magnetic lattice types of collinear antiferromagnetic materials mainly include A type, C type, G type and E type. The magnetic structure diagrams of the four types of collinear antiferromagnetic materials are shown in figure 1 shown. For A-type antiferromagnetic materials, if a bias is applied in the [001] direction (on the crystal plane perpendicular to the bias direction, the magnetic element layers between different crystal planes are antiferromagnetic coupling, and in the same crystal In-plane ferromagnetic coupling), because along the bias direction, different magnetic sublattices are at different chemical potential heights, which can break the symmetry of the magnetic sublattices and generate spin-polarized currents. Th...

Embodiment 2

[0041] Bias induced collinear antiferromagnetic material to generate spin polarized current and its regulation method, comprising the following steps:

[0042] Step 1: The structure of the magnetic lattice of NiO is as follows figure 2 As shown, its structure is similar to G-type collinear antiferromagnetic materials. Therefore, the direction in which the bias voltage is applied to NiO is the [111] direction. By establishing the corresponding device model along the NiO[111] direction, the model and magnetic structure diagram of the Au / NiO / Au structure device are shown in image 3 shown.

[0043] Step 2: Connect the Au electrode through NiO in the [111] direction, and apply a bias voltage, test and calculate the spin polarizability curve of the current passing through NiO under different bias voltages from -1.7 to +1.7V. Figure 4 As shown, the obtained spin polarizability data as a function of bias voltage are shown in Table 1 below. Determine the effect of bias voltage o...

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Abstract

The invention discloses a bias voltage induced collinear antiferromagnetic material spin polarization current generation and regulation and control method, and belongs to the technical field of antiferromagnetic materials. Specifically, a device is prepared by forming a film on a collinear antiferromagnetic material NiO in a specific crystal orientation, the bias voltage is applied to the specificcrystal orientation in the NiO[111] direction, the symmetry of a magnetic sub-dot matrix is broken through, spin polarization current as high as 80% is generated in NiO, and the polarizability and polarization direction of the spin polarization current can be regulated and controlled by applying the bias voltage. Furthermore, by regulating and controlling corresponding bias voltage application data, it can be guaranteed that 63% of spin polarization current can still be obtained under the condition that the interface is disordered, so that the method has very high interference resistance to the interface structure and feasibility in practical application.

Description

Technical field: [0001] The invention belongs to the field of antiferromagnetic technology, and in particular relates to a bias induced collinear antiferromagnetic material to generate spin polarized current and a control method thereof. Background technique: [0002] With the development of information technology, the size of the device is getting smaller and smaller, the speed is getting faster and the energy consumption is getting lower and lower. Traditional electrons use the charge property of electrons to generate Joule heat, while spintronics utilizes the spin property of electrons, and spintronic devices increase the dimension of electron spin. Spintronic device manipulation involves the spin of electrons, and its devices have lower energy consumption and operating speed. Compared with ferromagnetic materials, antiferromagnetic materials have faster flipping speed, no stray field and insensitivity to external magnetic fields, which have attracted extensive attention...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/04H01L29/24H01L29/66
CPCH01L29/045H01L29/24H01L29/66984
Inventor 张宪民仝军伟秦高悟
Owner NORTHEASTERN UNIV